2N7002E-T1-E3 Discrete Semiconductor Products

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2N7002E-T1-E3 is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This transistor is normally used as a low side switch. The 2N7002E-T1-E3 is a very small device with a slightly larger capacitance when compared to other similar devices. This MOSFET has a threshold voltage of 2V and a drain-source breakdown voltage of 40V. It is rated for a continuous drain current of 100mA and an RDS(ON) of 44mΩ.

The 2N7002E-T1-E3 can be used in a variety of applications, including but not limited to motor control, audio/video equipment, light dimming, motor speed control, robotics and other low-power switching applications. It can be used as a switch or as an amplifier to control the flow or vary the voltage or current in other circuits. This transistor can be used in both digital and analog electronics.

The working principle of a MOSFET is based upon the modulation of drain current by the gate-source voltage. When the gate-source voltage is set to zero (or negative), the MOSFET is off and no current flows. When the gate-source voltage is increased, the drain current increases, activating the MOSFET. The drain current is controlled directly by the gate-source voltage, making the MOSFET an ideal choice for low-power switching applications. To reduce the power losses, the drain-current should be kept as low as possible.

The 2N7002E-T1-E3 is an ideal choice for low side switch applications due to its low threshold voltage, low current requirement, and compact size. Despite its small size, this device is capable of handling up to 100mA of current and can handle up to 40V of drain-source breakdown voltage. Due to its low capacitance and low RDS(ON), this MOSFET can be used in high frequency circuits to provide faster switching speeds. This device is also ideal for portable electronics where power conservation is key.

In conclusion, the 2N7002E-T1-E3 is a very versatile MOSFET that can be used in a variety of applications. Its low threshold voltage and low current requirement make it an ideal choice for low-power switching applications. Moreover, its low drain current and low RDS(ON) make it suitable for high frequency switching applications. Due to its small size and excellent electrical performance, this device can be used in both digital and analog electronics.

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