BUK664R8-75C,118 Allicdata Electronics
Allicdata Part #:

1727-5527-1-ND

Manufacturer Part#:

BUK664R8-75C,118

Price: $ 1.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 75V 120A D2PAK
More Detail: N-Channel 75V 120A (Tc) 263W (Tc) Surface Mount D2...
DataSheet: BUK664R8-75C,118 datasheetBUK664R8-75C,118 Datasheet/PDF
Quantity: 672
1 +: $ 1.22850
10 +: $ 1.10754
100 +: $ 0.88988
Stock 672Can Ship Immediately
$ 1.36
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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Introduction

The BUK664R8-75C,118 is a N-Channel, insulated gate, field effect transistors (IGFET) with high voltage and high current capability. The BUK664R8-75C,118 is packaged in a super-small LGA (land grid array) package making it ideally suited for applications where space is a premium. The BUK664R8-75C,118 is available in Vth=75V and Vth=118V versions. The BUK664R8-75C,118 is suitable for applications such as motor control, lighting, power management, AC-DC conversion, power switching and audio.

Application Field

The BUK664R8-75C,118 is ideal for applications such as motor control, lighting, power management, AC-DC conversion, power switching and audio. This is due to its high voltage and high current capabilities.Motor control applications such as motor drives, actuators, and solenoids require accurate and reliable power switching. The BUK664R8-75C,118 provides a reliable solution for such applications by providing precise on/off control with fast switching speeds.In lighting applications, the BUK664R8-75C,118 can be used to provide a precise and repeatable power switching. This is ideal for applications such as LED lighting, where a precise level of light output is needed.Power management applications utilize the BUK664R8-75C,118 to provide reliable control of power supply and voltages. This is especially useful in applications where high current and precise voltage control is required.AC-DC conversion is another application where the BUK664R8-75C,118 can be used to provide a precise and consistent power supply. This is especially useful in applications such as solar systems, where a precise and consistent voltage is required for optimal performance.Power switching applications make use of the BUK664R8-75C,118 to provide precise and reliable switching. This is useful in applications such as AC appliances, where a precise and reliable switch is required.In audio applications, the BUK664R8-75C,118 can be used to provide precise and consistent control of audio supply and levels. This is especially useful in applications such as sound systems, where a precise and consistent audio level is required.

Working Principle

The BUK664R8-75C,118 utilizes an insulated gate, field effect transistors (IGFET) to provide precise, fast switching and high current capabilities. The IGFET is essentially two metal-oxide-semiconductor (MOS) transistors mounted in parallel. An electric field is used to control the current passing through the BUK664R8-75C,118 and is generated by the insulation layer that separates the gate and the source of the device. The voltage applied to the gate controls the current passing through the BUK664R8-75C,118. When a positive voltage is applied to the gate, electrons from the drain are attracted to the gate, thereby creating a conductive path and allowing current to pass through the device. When a negative voltage is applied to the gate, the electrons are repelled away creating an insulating layer. This prevents current from flowing through the device and the BUK664R8-75C,118 is in the off state.The voltage required to turn the BUK664R8-75C,118 is known as the threshold voltage (Vth). The Vth depends on the device model and is available in two versions: 75V and 118V. The BUK664R8-75C,118 has high current and high voltage capabilities due to its super-small size. This makes it ideal for applications that require precise and reliable power switching.

Conclusion

The BUK664R8-75C,118 is a high-performance N-Channel insulated gate, field effect transistor (IGFET) that offers high voltage and high current capability. It is ideally suited for applications requiring precise and reliable power switching as well as accurate and repeatable voltage and current control. The BUK664R8-75C,118 is available in two threshold voltage versions: 75V and 118V and is packaged in a super-small LGA (Land Grid Array) package.The BUK664R8-75C,118 is suitable for applications such as motor control, lighting, power management, AC-DC conversion, power switching and audio where fast switch times, precise voltage and current control, and reliable power switching are required.

The specific data is subject to PDF, and the above content is for reference

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