
DMN601VKQ-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN601VKQ-7DITR-ND |
Manufacturer Part#: |
DMN601VKQ-7 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 0.305A SOT563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.06376 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 305mA |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Description
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Introduction
The DMN601VKQ-7 is a semiconductor product manufactured by Infineon Technologies AG, a leader in semiconductor technology. It is an Array of Power MOSFETs in a P-channel, N-channel configuration and provides great performance and reliability. This device uses a special combination of silicon on insulator (SOI) technology and trench gate technology to produce the desired electrical characteristics. The DMN601VKQ-7 is the ideal choice for applications that require the highest levels of power efficiency, robust performance and low overall power consumption.Application Field
The DMN601VKQ-7 can be used in a wide range of applications such as consumer electronics, power conversion and automotive powertrain, as well as a variety of industrial and military applications. This device is suitable for use in a wide range of battery-powered and plug-in devices, allowing for high-speed switching, low power losses, and reliable operation. Additionally, it can be used in applications that require a high degree of isolation, such as overload protection and power ripple control, in addition to voltage and current limiting.The DMN601VKQ-7 is also a suitable choice for applications that require high-frequency switching, such as DC-DC converters, AC/DC circuits and switched-mode power supplies. This device is designed to deliver high-performance, high-efficiency switching with minimal energy losses even under extreme conditions.The DMN601VKQ-7 is also a great choice for applications that require high-voltage operation, such as switching of battery supplies and high-voltage load circuits. This device is designed to handle high-voltage switching applications up to 65V, allowing for greater flexibility in the design of high-voltage circuits.Working Principle
The DMN601VKQ-7 is a SOI-Trench Gate Power MOSFET Array. The unique architecture of the device allows for high efficiency and low power consumption. The Array consists of two power MOSFETs with the gate, source, and drain all connected together.The device utilizes two separate gate control circuits for the two MOSFETs. The first gate control circuit is used to control the current through the drain. This circuit uses a differential pair of P-channel MOSFETs to provide the current control. The second gate control circuit is used to control the voltage across the source and the drain. This circuit consists of an N-channel MOSFET.The device also utilizes a series of protection circuits to prevent over-voltage, over-current, and over-temperature conditions. The built-in protection circuits provide a robust design, allowing for reliable operation even under unexpected conditions.Conclusion
The DMN601VKQ-7 is a one-of-a-kind Array of Power MOSFETs. Utilizing SOI-Trench Gate technology, it offers high performance and great reliability. The DMN601VKQ-7 can be used in a wide range of applications such as consumer electronics, power conversion, automotive powertrain, and a variety of industrial and military applications. The device is designed to provide high-performance and high-efficiency switching with minimal energy losses even under extreme conditions. Additionally, it is also a suitable choice for applications that require high-voltage operation such as battery supplies and high-voltage load circuits.The specific data is subject to PDF, and the above content is for reference
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