
Allicdata Part #: | DMN6040SVTQ-7DITR-ND |
Manufacturer Part#: |
DMN6040SVTQ-7 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 5A TSOT26 |
More Detail: | N-Channel 60V 5A (Ta) 1.2W (Ta) Surface Mount TSOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.15441 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1287pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 4.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN6040SVTQ-7 is a Field Effect Transistor (FET) product from Texas Instruments, providing high-input impedance, fast switching capabilities, and low on-resistance. The DMN6040SVTQ-7 is a single-gate, N-channel MOSFET. It has the capabilities of surface-mount and through-hole packages.
The DMN6040SVTQ-7 offers high input impedance with a very low on-resistance, giving it the ability to switch high currents quickly. At the same time, the device has an integrated ESD protection of up to 8 kV HBM, making it ideal for applications where electrostatic discharge can be an issue. For additional protection, the device has an internal temperature cut-off of 175°C, ensuring that the FET does not exceed its maximum operating temperature and fail. The DMN6040SVTQ-7 is a small-zone thermal FET, meaning it has a low thermal resistance, which is ideal for small electronics applications where heat dissipation is a concern.
The DMN6040SVTQ-7 can be used in a variety of different applications, including power switching, motor control, battery management, high-side switches, and low-side switches. In power switching applications, the FET can be used to route power to multiple components and circuits, allowing the user to switch between them as necessary. For motor control applications, the FET can be used as a high-side switch, allowing the user to turn on/off the motor quickly. In battery management applications, the FET can be used to manage the charge/discharge of multiple batteries, preventing over-heating or under-charging. Furthermore, the DMN6040SVTQ-7 can be used as a high-side or low-side switch, allowing the user to control the voltage going to a component.
When it comes to the DMN6040SVTQ-7’s working principle, it makes use of the “gate-source voltage” (VGS) of the FET. When the gate-source voltage is between 0V and VGS(th), the FET is off, meaning no current flows through the channel. When the gate-source voltage is higher than VGS(th), the FET is on, meaning current can flow through the channel. When the gate-source voltage is higher than VGS(sat), the FET is in saturation, meaning the current is limited and the voltage is constant.
The DMN6040SVTQ-7 is a versatile, low-on resistance, high-speed FET designed for use in a variety of applications. Its single-gate N-channel MOSFET design provides high input impedance and fast switching capabilities, while also offering integrated ESD protection and over-temperature protection. Its wide range of possible applications, from power switching and motor control to battery management and high/low-side switch control, make the DMN6040SVTQ-7 a suitable choice for numerous electronics applications.
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