| Allicdata Part #: | DMN6140L-13DITR-ND |
| Manufacturer Part#: |
DMN6140L-13 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 60V 1.6A SOT23 |
| More Detail: | N-Channel 60V 1.6A (Ta) 700mW (Ta) Surface Mount S... |
| DataSheet: |  DMN6140L-13 Datasheet/PDF |
| Quantity: | 700000 |
Specifications
| Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 10V |
| Base Part Number: | DMN6140 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 40V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 1.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The DMN6140L-13 is a N-channel enhancement mode MOSFET that serves as a voltage-controlled switch with various applications. This particular device features low threshold voltage, high transconductance, and low on-resistance construction. It is a metal–oxide–semiconductor field effect transistor (MOSFET) that uses insulated gate and is designed to work in medium and high power applications.
Application FieldThe DMN6140L-13 is suitable for a variety of applications, ranging from power management, motor control, and current sensing to logic level conversion. It can be used in switching applications, such as rectifier diodes, and in linear amplifier circuits. It has a superior avalanche capability, making it an ideal choice for high frequency, switched mode power supply (SMPS), and automotive applications. It can also be used in power converters, power switches, and in audio amplifiers, pre-amplifiers, and voltage regulators.
Working PrincipleThe DMN6140L-13 is an N-channel enhancement-mode device. It has three terminals, including the source terminal, the drain terminal, and the gate terminal. It is often referred to as a voltage-controlled device, meaning that the current flow through the device is controlled by the voltage applied to the gate terminal. The device has a low threshold voltage, which allows for low gate drive requirements and a low on-resistance. When a voltage is applied to the gate terminal, electrons from the source terminal migrate to the drain terminal, allowing current to flow through the device. The amount of current is determined by the voltage applied to the gate.When the voltage applied to the gate is reduced, the current flow is reduced, and when the voltage applied to the gate is completely removed, the current flow stops completely. This allows for precise control of the current and offers greater flexibility for the design of power switching applications.
In conclusion, the DMN6140L-13 is an N-channel enhancement mode MOSFET designed to work in a variety of applications, including power management, motor control, current sensing, and logic level conversion. With its low threshold voltage, adjustable on-resistance, and avalanche capability, the device is well-suited for a variety of medium and high power circuit requirements.
The specific data is subject to PDF, and the above content is for reference
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