
Allicdata Part #: | DMN61D9UW-7DITR-ND |
Manufacturer Part#: |
DMN61D9UW-7 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.34A |
More Detail: | N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 9000 |
1 +: | $ 0.60000 |
10 +: | $ 0.49000 |
100 +: | $ 0.38000 |
1000 +: | $ 0.25000 |
10000 +: | $ 0.12000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 28.5pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 340mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Power MOSFET is an acronym for metal oxide semiconductor field effect transistor, also known as an insulated-gate FET (IGFET). The DMN61D9UW-7 is a single n-channel enhancement mode power MOSFET designed to deliver high levels of performance and reliability. The device\'s high-efficiency performance and low on-state resistance make it an ideal candidate for a number of power management applications.
The DMN61D9UW-7 operates with a very low gate charge. This enables the device to switch very quickly with minimal losses, making it suitable for applications that require ultra-fast switching speeds. The device also supports high current densities and has an operating frequency range of up to 3GHz, making it suitable for a wide variety of high-speed applications.
One of the key advantages of the DMN61D9UW-7 is its extremely low on-state resistance, which is about 0.4Ohm. This makes the device ideal for applications that require high current and low voltage operation, such as DC-DC converters, motor control applications, and power amplifiers. The device is rated for an operating temperature range of 0C to 85C and has a breakdown voltage of 200V.
In terms of its working principle, the DMN61D9UW-7 is a metal oxide semiconductor field effect transistor. It operates by using an electric field to control the current flow between two contacts, the source and the drain. When a voltage is applied to the gate terminal, it creates an electric field which modulates the width of a semiconductor channel, allowing current to flow between the source and the drain. The size of the current depends on the voltage applied to the gate terminal.
The DMN61D9UW-7 is suitable for a variety of applications, including power management, motor control, audio amplifiers, and other power electronics applications. It is also widely used in telecommunication systems, and automotive applications. The device is designed to perform in a wide temperature range, providing high reliability and long-term performance while consuming minimal power.
The DMN61D9UW-7 is a versatile and reliable device and is capable of delivering high current and low on-state resistance. Its efficient performance and wide operating frequency range make it ideal for a variety of power management, motor control, and audio amplifier applications.
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