
Allicdata Part #: | DMN6069SFG-13-ND |
Manufacturer Part#: |
DMN6069SFG-13 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 5.6A POWERDI333 |
More Detail: | N-Channel 60V 5.6A (Ta), 18A (Tc) 930mW (Ta) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.16178 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 930mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Ta), 18A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN6069SFG-13 is a two-lead, mono-channel, N-channel enhancement-mode Gallium Nitride Semiconductor Field Effect Transistor (GaN FET) with Schottky contact structure. This type of FET is widely used for power management tasks in different types of electronics systems, including: switching and linear regulators, high frequency power supplies, motor speed control, and automotive.
The DMN6069SFG-13 GaN FET is one of the most popular and reliable power devices available in the market due to its features and robustness. It features an easy to use dual-channel package with two leads. This FET offers up to 2A of ON-state current and low RDSON values at frequencies up to 10MHz, thus making it a good choice for regulating power management applications.
The DMN6069SFG-13 is particularly useful in circuit designs requiring wide operating temperature and low drain-source on-resistance. Whereas, its Schottky gate contact structure and advanced packaging materials, permit the reliable operation of the device over extended temperatures that meet the requirements of industrial, telecom and automotive customers, making it ideal for applications such as H-bridge motor drives, asynchronous motor control, synchronous rectifiers, and switching power supplies.
The working principle of a GaN FET is based on a temperature-dependent band gap material such as Silicon Carbide (SiC), Gallium arsenide (GaAs), or Gallium Nitride (GaN). When this material is used as a semiconductor for power amplifiers, High Frequency (HF) amplifiers, and oscillators, it produces a negative temperature coefficient, meaning that the device resistance decreases when the temperature increases. This property allows the FET to handle high current at high temperatures.
Typically, the N-channel MOSFETs are considered to be good at handling higher temperatures due to their good thermal characteristics, but this is only true up to a certain temperature. However, the DMN6069SFG-13 GaN FET is capable of operating at temperatures up to 150°C (302°F) without any increase in drain-source on-resistance. This advanced temperature capability makes the DMN6069SFG-13 a suitable choice for power management tasks in advanced and reliable electronics applications.
The DMN6069SFG-13 operates at frequencies up to 10MHz, making it ideal for power management applications. Its wide operating temperature range and low drain-source on-resistance assist in improving the overall system performance. Further, the device has a good ESD clamping characteristic, reducing the effect of electrostatic discharge damage in sensitive electronics systems. Additionally, its Schottky gate contact structure provides a level of robustness and reliability against board flex and vibration. All these features make the DMN6069SFG-13 ideal for various industrial, telecom, and automotive power management applications.
The specific data is subject to PDF, and the above content is for reference
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