DMN61D8L-7 Allicdata Electronics
Allicdata Part #:

DMN61D8L-7DITR-ND

Manufacturer Part#:

DMN61D8L-7

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.47A SOT23
More Detail: N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount ...
DataSheet: DMN61D8L-7 datasheetDMN61D8L-7 Datasheet/PDF
Quantity: 21000
3000 +: $ 0.10400
Stock 21000Can Ship Immediately
$ 0.12
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMN61D8L-7 is a logic level N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is especially designed for low gate drive voltages, and it is also a fast switching MOSFET. This kind of MOSFETs are used commonly in the market, and the DMN61D8L-7 is the best choice for low gate drive voltages applications.

The DMN61D8L-7 belongs to the logic level family of MOSFETs, which can be switched with a low gate voltage. This MOSFET is designed to operate with a higher current rating than the standard MOSFETs. It has a drain to source voltage rating of 60V and a drain current rating of 8A. The on-resistance value of DMN61D8L-7 is 25m Ω at 10Vgate voltage, and the on-resistance decreases to 7m Ω at 5Vgate voltage, which makes the DMN61D8L-7 the perfect choice for low gate drive voltages.

The DMN61D8L-7 is generally used in low operating voltages, such as 5V and 12V DC. It is suitable for fast switching applications like motor control, DC/DC converters, power switching circuits, and also for electronic device control applications. It is also used in digital logic circuits and ground referenced analog applications. The DMN61D8L-7 has a number of versatile uses, such as in low voltage audio amplifiers and digital signal controllers.

The DMN61D8L-7 works by using the conduction of electrons and holes through the source and drain. In a MOSFET, the gate voltage being applied causes a change in the conductivity of the channel between the source and drain. Applying a positive gate voltage attracts electrons towards the gate, thus forming a channel. This channel has a low resistance, allowing electrons to flow from the source to the drain. Additionally, the channel can be “shut off” by applying a negative gate voltage, thus blocking the current flow.

The DMN61D8L-7 is an ideal choice for applications where low gate drive voltages are needed, as it has a low Drain-Source resistance at 5V voltages. It is also a fast switching MOSFET, making it useful for fast switching applications. This makes the DMN61D8L-7 a great choice for many power applications, providing high-efficiency and high-excursions, as well as low power losses. The DMN61D8L-7 is an ideal choice for applications where low gate drive voltages and fast switching is needed.

The specific data is subject to PDF, and the above content is for reference

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