
Allicdata Part #: | DMN61D8L-7DITR-ND |
Manufacturer Part#: |
DMN61D8L-7 |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.47A SOT23 |
More Detail: | N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 21000 |
3000 +: | $ 0.10400 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 390mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12.9pF @ 12V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.74nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 150mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 470mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN61D8L-7 is a logic level N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is especially designed for low gate drive voltages, and it is also a fast switching MOSFET. This kind of MOSFETs are used commonly in the market, and the DMN61D8L-7 is the best choice for low gate drive voltages applications.
The DMN61D8L-7 belongs to the logic level family of MOSFETs, which can be switched with a low gate voltage. This MOSFET is designed to operate with a higher current rating than the standard MOSFETs. It has a drain to source voltage rating of 60V and a drain current rating of 8A. The on-resistance value of DMN61D8L-7 is 25m Ω at 10Vgate voltage, and the on-resistance decreases to 7m Ω at 5Vgate voltage, which makes the DMN61D8L-7 the perfect choice for low gate drive voltages.
The DMN61D8L-7 is generally used in low operating voltages, such as 5V and 12V DC. It is suitable for fast switching applications like motor control, DC/DC converters, power switching circuits, and also for electronic device control applications. It is also used in digital logic circuits and ground referenced analog applications. The DMN61D8L-7 has a number of versatile uses, such as in low voltage audio amplifiers and digital signal controllers.
The DMN61D8L-7 works by using the conduction of electrons and holes through the source and drain. In a MOSFET, the gate voltage being applied causes a change in the conductivity of the channel between the source and drain. Applying a positive gate voltage attracts electrons towards the gate, thus forming a channel. This channel has a low resistance, allowing electrons to flow from the source to the drain. Additionally, the channel can be “shut off” by applying a negative gate voltage, thus blocking the current flow.
The DMN61D8L-7 is an ideal choice for applications where low gate drive voltages are needed, as it has a low Drain-Source resistance at 5V voltages. It is also a fast switching MOSFET, making it useful for fast switching applications. This makes the DMN61D8L-7 a great choice for many power applications, providing high-efficiency and high-excursions, as well as low power losses. The DMN61D8L-7 is an ideal choice for applications where low gate drive voltages and fast switching is needed.
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