DMN61D8LQ-7

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The DMN61D8LQ-7 is a MOSFET (metal oxide semiconductor field effect transistor) of the Single family. It is an Enhancement Type n-channel device based on Silicon. It is designed, manufactured, and delivered in an intSOP-8 (Small Outline Package) and features a maximum power dissipation of 1.5 W.

The application field of the DMN61D8LQ-7 translates to various possible applications in both the commercial and industrial sectors. Due to its low on-resistance, high speed switching capability and small size, it can be used as an electronic switch in motor drivers, relays, and other applications. The DMN61D8LQ-7 is capable of maintaining an output voltage as low as 0.1V with a current of 10A. It is compatible with a wide range of logic levels, including TTL (transistor-transistor logic), CMOS (complementary metal-oxide semiconductor), and even LVTTL (low-voltage transistor-transistor logic) levels. As a result, it can be used in the design of logic gates, voltage sources, resistive dividers, and other circuits that require switching power supplies.

The working principle of the DMN61D8LQ-7 is based on the use of a metal oxide semiconductor as the key element. By applying a voltage to the gate, the device can be turned on or off. When the voltage is positive, the MOSFET is on and a drain-source path is formed, allowing current to flow from the drain to the source. Conversely, when the voltage is negative, the MOSFET is off and current is prevented from flowing. The drain-source path is only conductive when the gate input exceeds the threshold voltage, which varies depending on the model and application.

The DMN61D8LQ-7 is equipped with several protection measures, such as a negative-latch shut-down mode, a thermal shutdown circuit, and a short circuit current limit. These features provide additional safety to the user and enable the use of the device in a wide variety of applications. Additionally, the MOSFET has a very low gate charge, which makes it an ideal choice for high-speed switching applications. The device\'s small size and low power consumption also make it ideal for space-constrained and power-sensitive applications.

Overall, the DMN61D8LQ-7 is an ideal MOSFET for applications requiring a compact, low-power, high-speed switching solution. Its versatility, compatibility with wide logic levels, and advanced protection features make it suitable for many applications in both commercial and industrial settings. Its reliable performance and excellent power dissipation properties make it an excellent choice for motor drivers, relays, and other switching applications.

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