DMN6022SSD-13 Allicdata Electronics
Allicdata Part #:

DMN6022SSD-13DITR-ND

Manufacturer Part#:

DMN6022SSD-13

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET BVDSS: 41V 60V SO-8
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 6A (Ta), 14A (...
DataSheet: DMN6022SSD-13 datasheetDMN6022SSD-13 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.19698
Stock 2500Can Ship Immediately
$ 0.22
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V
Power - Max: 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMN6022SSD-13 Application Field and Working Principle

The DMN6022SSD-13 is a silicon carbide (SiC) power MOSFET(Metal Oxide Semiconductor Field Effect Transistor) produced by Diode-Laser Technology Co., Ltd. It is used primarily in high power switching devices and various power electronics applications. It is the first of its kind, featuring a very low current density and improved switching speeds. Because of its superior performance, it stands out as the most promising option for high-power switching applications.

Features of DMN6022SSD-13

  • Atomic scale electrostatically stabilized gate (ESG), which extends the low-end switching threshold to -1.0V
  • Low gate charge, fast switching speed, and low resistance
  • Very low on-state resistance for high frequency switching
  • Ability to handle high inversion voltages with ease

Application Field of DMN6022SSD-13

The impressive features of the DMN6022SSD-13 make it suitable for a wide range of applications, including DC/DC converters, AC inverters, and other power electronics devices. Its low input resistance and fast switching speeds make it especially suitable for power electronic applications such as DC/DC converters, solar energy applications, AC inverters, electric vehicle chargers, and other automotive applications, as well as applications such as electronic ballasts and many other applications requiring energy efficient and reliable switching.

Working Principle of DMN6022SSD-13

The DMN6022SSD-13 features a special proprietary technology known as Atomic Scale Electrostatically Stabilized Gate (ESG for short). This technology is the first of its kind and enables the DMN6022SSD-13 to provide superior performance with superior reliability by using a control gate voltage that is lower than any other MOSFET. This reduces the resistance of the device and provides a much faster switching speed. The lower gate voltage also helps to reduce the switching losses due to stored charge, allowing for an extremely low on-state resistance.

In addition, the DMN6022SSD-13 also features an advanced thermal design that ensures efficient heat dissipation and helps to minimize the power dissipation. The advanced thermal design also helps to extend the lifetime of the device and reduce the risk of failure. This makes the device ideal for use in high power switching applications such as those used in solar energy and electric vehicle charging applications.

The specific data is subject to PDF, and the above content is for reference

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