
Allicdata Part #: | DMN6022SSD-13DITR-ND |
Manufacturer Part#: |
DMN6022SSD-13 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 41V 60V SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6A (Ta), 14A (... |
DataSheet: | ![]() |
Quantity: | 2500 |
2500 +: | $ 0.19698 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 14A (Tc) |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 30V |
Power - Max: | 1.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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DMN6022SSD-13 Application Field and Working Principle
The DMN6022SSD-13 is a silicon carbide (SiC) power MOSFET(Metal Oxide Semiconductor Field Effect Transistor) produced by Diode-Laser Technology Co., Ltd. It is used primarily in high power switching devices and various power electronics applications. It is the first of its kind, featuring a very low current density and improved switching speeds. Because of its superior performance, it stands out as the most promising option for high-power switching applications.
Features of DMN6022SSD-13
- Atomic scale electrostatically stabilized gate (ESG), which extends the low-end switching threshold to -1.0V
- Low gate charge, fast switching speed, and low resistance
- Very low on-state resistance for high frequency switching
- Ability to handle high inversion voltages with ease
Application Field of DMN6022SSD-13
The impressive features of the DMN6022SSD-13 make it suitable for a wide range of applications, including DC/DC converters, AC inverters, and other power electronics devices. Its low input resistance and fast switching speeds make it especially suitable for power electronic applications such as DC/DC converters, solar energy applications, AC inverters, electric vehicle chargers, and other automotive applications, as well as applications such as electronic ballasts and many other applications requiring energy efficient and reliable switching.
Working Principle of DMN6022SSD-13
The DMN6022SSD-13 features a special proprietary technology known as Atomic Scale Electrostatically Stabilized Gate (ESG for short). This technology is the first of its kind and enables the DMN6022SSD-13 to provide superior performance with superior reliability by using a control gate voltage that is lower than any other MOSFET. This reduces the resistance of the device and provides a much faster switching speed. The lower gate voltage also helps to reduce the switching losses due to stored charge, allowing for an extremely low on-state resistance.
In addition, the DMN6022SSD-13 also features an advanced thermal design that ensures efficient heat dissipation and helps to minimize the power dissipation. The advanced thermal design also helps to extend the lifetime of the device and reduce the risk of failure. This makes the device ideal for use in high power switching applications such as those used in solar energy and electric vehicle charging applications.
The specific data is subject to PDF, and the above content is for reference
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