DMN6013LFGQ-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2577pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	55.4nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.3A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMN6013LFGQ-13 is a depletion-mode enhancement-mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with N-channel junction type. It has a drain current rating of 13A and a drain-source breakdown voltage (Vds) of 60V. The device also has a low gate to drain leakage current and high speed switching.The DMN6013LFGQ-13 is typically used in low-side switching applications, such as motor controllers, power supplies, and DC-DC converters. It can also be used for switching applications where the control voltage is applied to the gate instead of the drain. The DMN6013LFGQ-13 is well-suited for power equipment such as LCD monitors, audio amplifiers, and hot-swap controllers.The DMN6013LFGQ-13 is a depletion-mode MOSFET, which means that the transistor is normally off and the gate needs to be pulled to the negative power supply rail to turn the transistor on. This type of device is useful in applications where the load is switched quickly, such as motor controllers and motors.The working principle of the DMN6013LFGQ-13 involves gate reversal. When gate voltage (Vg) is applied or removed, the gate of the transistor pulls/pushes current (Ig) from/to the substrate relative to the negative power supply rail. This causes the channel channel to be formed under the gate; this is known as channel creation or channel complementation.As the channel width increases, the resistance of the channel decreases and the current flowing from the drain to the source increases. The resulting current flow (Ids) is determined by the input voltage (Vds) applied to the two pins of the device and the MOSFETs control voltage (Vgs). When Vgs is greater than Vth (threshold voltage), the transistor turns on and the current flows through the drain-source path.The DMN6013LFGQ-13 is a low on-resistance MOSFET, meaning it has very low drain-source resistance while being able to handle high current. Its low on-resistance makes it highly efficient in switching applications, allowing the user to control the load current with very low power loss. Its high-speed switching technology also makes it ideal for high-speed control applications.In summary, the DMN6013LFGQ-13 is a metal-oxide-semiconductor field-effect transistor with N-channel junction type and depletion mode. It is typically used in low-side switching applications such as motor controllers and power supplies. Its working principle involves gate reversal in which the gate of the transistor pulls/pushes current from/to the substrate relative to the negative power supply rail. It also has a low gate to drain leakage current, a drain current rating of 13A and a high speed switching characteristic.

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