DMN61D9UDW-7 Allicdata Electronics
Allicdata Part #:

DMN61D9UDW-7DITR-ND

Manufacturer Part#:

DMN61D9UDW-7

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 0.35A
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 350mA 320mW Su...
DataSheet: DMN61D9UDW-7 datasheetDMN61D9UDW-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.60000
10 +: $ 0.48000
100 +: $ 0.37000
1000 +: $ 0.13000
10000 +: $ 0.12000
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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DMN61D9UDW-7 is elite among field-effect transistors (FETs) and MOSFETs since it offers a wide range of applications, as well as a superior ability to control the flow of electricity for optimizing performance in signal amplification and signal switching.

FETs and MOSFETs are components of basic electrical circuits that are used to control the flow of electricity in a circuit. These components are arranged in arrays, mathematical constructions that can contain a large number of elements, allowing them to control the distribution of electricity in a circuit. The DMN61D9UDW-7 is an array of MOSFETs and FETs that offer a high level of functionality for electrical applications that require a high degree of accuracy and efficiency.

The device uses a structure of an overhead capacitance and an external gate structure, which allow it to efficiently control the flow of electrons. This structure increases the control that can be achieved over the electrical current, as well as the energy efficiency of the device. The array also includes other components, like a Schottky diode, which allows it to improve the switching speed and to regulate the current.

The DMN61D9UDW-7 offers application in various areas due to its high performance and energy efficiency. It is commonly used in the automotive industry, because it is highly reliable and has a long life-span. It has also been used for signal amplification in telecommunication networks, as well as for amplifying audio sound signals in audio equipment. Other application fields include switching power supplies, motor control, and signal conditioning.

The working principle of the DMN61D9UDW-7 array is based on the fact that it utilizes the ability of the external gate structure to control the flow of electrons. The electrons flow from the source to the drain when a small voltage, usually between 0 and 10 V, is applied to the gates of the transistors. This voltage turns the transistors on and off, allowing the flow of electrons to be regulated. The Schottky diode included in the device also helps to provide stability and reduce switching losses, making it even more energy efficient.

The DMN61D9UDW-7 is an example of one of the most advanced FETs and MOSFETs, offering a high level of functionality, performance and energy efficiency. Its versatile array of components, combined with its superior ability to control the flow of electricity, make it an ideal choice for automotive, communications, audio and other applications that require a high level of accuracy and efficiency.

The specific data is subject to PDF, and the above content is for reference

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