FDMC007N08LC

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The FDMC007N08LC is an N-channel enhancement mode, pseudo-protective, Mosfet transistor. It can be classified as a single FET, or field effect transistor, relying on the flow of electrons to control the transfer characteristics of the device. The FDMC007N08LC is developed and manufactured by Fairchild Semiconductor.

The semiconductor device is designed to meet a wide range of electronic applications, such as audio amplifiers and thermally sensitive applications, which require protection from high input currents and a secure low “on” resistance. The FDMC007N08LC offers a cost-effective, high voltage MOSFET solution with a high drain to source breakdown voltage (BVdss) , making it a suitable option for electrical applications where low on-state loss and high gain are desired.

The FDMC007N08LC is comprised of two copper leads with two gold plated contacts for the source and drain terminals, as well as gold plated gate contacts for the gate terminal. In operation, the source, drain, and gate of the FDMC007N08LC are supplied with an electrical potential which, when combined, trigger the MOSFET to conduct. When the FDMC007N08LC are in the “off” state, defined by a low potential at the gate, no conduction is occurring. When the gate potential is increased, the FDMC007N08LC MOSFET reaches a critical threshold value and is triggered to the “on stateThe FDMC007N08LC can perform well in a wide range of electronic and electrical applications. These include industrial inverters, motor controls, current sensing, light sensing, general purpose switching, AC/DC and DC/DC converters. The MOSFET is also useful in consumer electronics and embedded applications, such as audio amplifiers, oven outputs, and other thermally sensitive applications. The superior gain and low on-state loss of the FDMC007N08LC makes it a popular choice in many of these applications. Additionally, the FDMC007N08LC has a strong air gap for greater protection, keeping it safe from external interference. The FDMC007N08LC can also be used to improve efficiency in power conversion systems. Its low gate drive voltage and gate capacitance, coupled with its high gate resistance, make it a great choice for applications that require precise current control. The device is also able to dissipate a lot of heat, making it suitable for high power applications. Finally, the TDDB withstand of the FDM007N08LC is twice that of standard Mosfets, offering superior protection from voltage spikes and ESD shocks.Overall, the FDMC007N08LC is a great choice for engineers and designers looking to integrated high-voltage MOSFET solutions into a wide range of applications. Its low on-state resistance, combined with its high-breakdown voltage, makes it perfect for a variety of industrial electronic applications that require the precise current control and protection. With its high gain, excellent thermal performance, and superior reliability, the FDMC007N08LC can be used in a variety of electronic applications.

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