FDMC7570S

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	8-PowerTDFN
Supplier Device Package:	Power33
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.3W (Ta), 59W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4410pF @ 13V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 10V
Series:	PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs:	2 mOhm @ 27A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	27A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDMC7570S Application Field and Working Principle

The FDMC7570S is a single N-Channel Enhancement Mode MOSFET designed for applications where high current, low drain-source on-state resistance, low gate charge and fast switching speeds are required. It is specifically designed by Fairchild Semiconductor for linear switching and high performance surface mount applications.

Overview

The FDMC7570S consists of a 10 mΩ N-channel Enhancement Mode MOSFET with a threshold voltage of 3V and a drain-source breakdown voltage of 45V. The device features a gate charge of 12.3nC, a maximum drain current of 3A and a maximum drain source voltage of 45V. It is available in a cost effective SOT-223 surface mount package which is capable of dissipating up to 2 watts of power. The device offers high speed operation with a total gate charge of just 12.3nC.

Applications

The FDMC7570S is suitable for use in a variety of applications including audio power amplifiers, power switching regulators, low voltage DC-DC converters, battery management, DVD players, and other battery-powered equipment. The device\'s low gate charge and low on-resistance can be used to reduce power dissipation in low voltage applications. Additionally, the device is capable of operating at very high switching frequencies, allowing it to be used in a wide range of high-speed switching applications.

Working Principle

MOSFETs are unipolar transistors, meaning they use a single polarity of electric charge to control the conductivity of their channel. The FDMC7570S is an N-Channel Enhancement Mode MOSFET, meaning the N-type channel is "enhanced" by the presence of a positive voltage applied to the gate. When the gate voltage is higher than the threshold voltage, the N-channel opens up and allows current to flow through it. The strength of the current is determined by the source voltage, the drain voltage, and the resistance of the channel. As the gate voltage increases, the resistance of the channel decreases, allowing more current to pass through.The FDMC7570S has a maximum drain-source voltage rating of 45 V and a maximum drain current of 3 A. This allows it to provide high current switching in a very small package. Additionally, the FDMC7570S has low gate charge, meaning it takes less energy to open the N-channel than other MOSFETs. This helps to minimize power dissipation and reduce heat in high-speed switching applications.

Conclusion

The FDMC7570S is a single N-Channel Enhancement Mode MOSFET designed for applications requiring high current, low drain-source on-state resistance, low gate charge and fast switching speeds. It is ideal for use in audio power amplifiers, power switching regulators, low voltage DC-DC converters, battery management, DVD players, and other battery-powered equipment. The device offers a low gate charge, a threshold voltage of 3V, a drain-source breakdown voltage of 45V, and a maximum drain current of 3A in a cost effective SOT-223 package. This makes it an ideal choice for high-speed applications where power dissipation and heat are a concern.

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