| Allicdata Part #: | FDS6675A-ND |
| Manufacturer Part#: |
FDS6675A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 30V 11A 8SOIC |
| More Detail: | P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | FDS6675A Datasheet/PDF |
| Quantity: | 1000 |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 5V |
| Base Part Number: | FDS6675 |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2330pF @ 15V |
| Vgs (Max): | ±25V |
| Series: | PowerTrench® |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FDS6675A is a type of single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a very common type of semiconductor device used for switching, amplifying, and other signal processing functions. It is popular for use in digital and mixed signal applications, and is typically found in consumer electronics, automotive, and aerospace systems.
The FDS6675A is a fairly simple device, containing a single MOSFET, with a few I/O terminals and various control elements. The device is actually two transistors connected in parallel, to allow for more efficient operation. The output of the FDS6675A is a voltage level, controlled by the current at the gate terminal of the device.
The function of the FDS6675A is to act as a switch, allowing or blocking current flows between source and drain, depending on the gate voltage. It can also be used to amplify weak signals, by the current-controlled voltage gain technique.
The FDS6675A is commonly used in a variety of applications, including power switching, audio processing, motor control, robotics, and other industrial and consumer control applications. It is very useful in these applications because of its small package size, low power consumption, high efficiency, and high noise immunity.
The working principle of the FDS6675A is based on the principle of the MOSFET. As the name implies, a MOSFET is a type of transistor, in which a Metal Oxide layer is used to control the flow of current across its floating gate. The MOSFET is also known as an insulated-gate field-effect transistor (IGFET).
The working principle of the FDS6675A can be further explained by looking at the structure of the device. The device consists of a drain, a source, and a gate electrode. The electric current can flow either way between the source and drain, depending on the voltage applied to the gate terminal. The gate voltage changes the resistivity of the channel between the source and drain, and this in turn controls the amount of current that can flow between the source and drain.
The FDS6675A is a very useful and versatile device, as it can be used for a variety of signal processing, switching, and amplification purposes. It is found in many consumer electronics, automotive, and aerospace systems, and is a very popular choice for mixed signal applications.
The specific data is subject to PDF, and the above content is for reference
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FDS6675A Datasheet/PDF