FDS6679AZ

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The FDS6679AZ is a single-stage, Enhancement-Mode Field Effect Transistor (FET) designed to provide simple, low cost control of low-level signals in moderately rugged applications. This low current control FET is also well-suited for a variety of logic and power supply switch operations. The FDS6679AZ is a monolithic silicon integrated circuit designed to be used in aerospace and related applications.

The FDS6679AZ has a package size of 19.98mm and 4.55mm, with a maximum junction temperature rating of 150°C. The FDS6679AZ is capable of withstanding an electrostatic discharge of up to 16.071kV. It has three terminals, the gate, drain, and source. It is capable of a maximum peak gate current of 17.6mA and a continuous drain current of 9.9mA at a drain voltage of 1.14V. It can withstand a breakdown voltage of up to 9V and a gate-drain voltage of 5V.

The working principle of the FDS6679AZ is based on its unique internal structure, which consists of two p type layers and one n type layer, forming an enhancement-mode FET structure. The two p type layers, referred to as the gate and the drain, form a Schottky-type barrier. An external voltage is applied to these two layers, and the voltage difference between them creates an electric field close to the substrate. The electric field acts as a barrier, preventing current from flowing across the interface between the n type layer and the p type layer.

When the electric field is sufficiently large, it can cause electrons to be pushed into the n type layer. This creates a buried layer of high electron concentration, or “inversion layer”, which forms a conduction path to the source terminal. The source terminal is almost completely depleted of electrons, resulting in a very small voltage drop across the source-gate junction. As a result, when a voltage is applied to the gate terminal, a relatively large current flows between the source and drain terminals.

The FDS6679AZ is used in a variety of applications, such as logic circuits, digital signal processing, signal switching, and power supply switching. It is particularly suitable for applications where low voltage control is required. It is also used in motor control applications, due to its low on-resistance and low gate threshold voltage.

In summary, the FDS6679AZ is a low current control FET designed to provide simple, low cost control of low-level signals in moderately rugged applications. Its enhancement-mode FET structure, low gate threshold voltage, small voltage drop differential between the source and gate terminals, and low on-resistance make it a great choice for various logic gate, digital signal processing, signal switching, and power supply switching applications.

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