FDS6680 Discrete Semiconductor Products |
|
| Allicdata Part #: | FDS6680TR-ND |
| Manufacturer Part#: |
FDS6680 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 11.5A 8-SOIC |
| More Detail: | N-Channel 30V 11.5A (Ta) 2.5W (Ta) Surface Mount 8... |
| DataSheet: | FDS6680 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 11.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDS6680 is a thin-film field-effect transistor (TFT-FET) specifically designed to operate as a switching device. It is a single-channel transistor that has a nominal channel length of 10 microns and is suitable for use in various applications such as switching, voltage regulation, and signal transmission. Its main feature is the low-voltage, low-power requirements for operation. The FDS6680 is typically used for applications that require fast switching and low power consumption.
The FDS6680 has two active regions, the source and drain regions, with the channel region, or channel body, located between them. This channel region is composed of a thin, highly conductive layer of a semiconductor material such as silicon, gallium arsenide, or indium gallium arsenide. When an external electric field is applied to the gate region, the FDS6680 is turned on and a channel of current forms between the source and drain regions. Since the channel region is composed of a thin film, the FDS6680 can be operated at very low voltages and with very low power, thus making it suitable for applications that require highly efficient operation.
The FDS6680 also features a backgate, which is a region between the source and drain regions and the gate area. The backgate is used to adjust the threshold voltage of the transistor and also to control the output current of the transistor. The FDS6680 has a low frequency noise stability that ensures that the transistor operates in a reliable and stable manner. Additionally, this device offers high efficiency and fast switching time, making it suitable for applications that require speed and accuracy.
The working principle of the FDS6680 is straightforward. When a voltage is applied to the gate, it attracts positively charged carriers from the substrate. This allows current to flow from the source to the drain. The amount of current that flows depends on the amount of voltage applied to the gate, which can range from 0 to 8 volts. Additionally, the voltage applied to the gate can be modulated to control the output current of the FDS6680. This type of modulation is called pulse width modulation (PWM).
The FDS6680 can be used in various applications such as load switching in digital circuits, speed control of motor control systems, audio amplifiers, switching circuit control, motor control circuits, signal transmission, and voltage regulation. This device is often used in applications that require low power consumption, low voltage, and fast switching speeds. Additionally, due to its low noise and stable operation, the FDS6680 is often used in sensitive signal transmission applications such as audio and video.
The FDS6680 is a very versatile switching device with a variety of applications. Its low power consumption, low voltage, and fast switching times make it a great choice for applications that require reliable and efficient operation. Additionally, its noise stability makes it suitable for sensitive applications in audio and video transmission. With its versatile features, the FDS6680 is a great choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FDS6984S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 5.5A/8.5... |
| FDS6911 | ON Semicondu... | -- | 22500 | MOSFET 2N-CH 20V 7.5A 8SO... |
| FDS6961A | ON Semicondu... | -- | 5000 | MOSFET 2N-CH 30V 3.5A 8SO... |
| FDS6910 | ON Semicondu... | -- | 20000 | MOSFET 2N-CH 30V 7.5A 8SO... |
| FDS6898AZ-F085 | ON Semicondu... | 0.74 $ | 1000 | MOSFET 2N-CH 20V 9.4A 8SO... |
| FDS6673BZ-F085 | ON Semicondu... | 0.35 $ | 1000 | MOSFET P-CH 30V 14.5A 8-S... |
| FDS6680A | ON Semicondu... | -- | 12500 | MOSFET N-CH 30V 12.5A 8-S... |
| FDS6900AS | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 6.9A/8.2... |
| FDS6898A_NF40 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 9.4A 8-S... |
| FDS6930B | ON Semicondu... | -- | 2500 | MOSFET 2N-CH 30V 5.5A 8SO... |
| FDS6812A | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 6.7A 8SO... |
| FDS6670AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 13.5A 8SO... |
| FDS6570A | ON Semicondu... | -- | 2500 | MOSFET N-CH 20V 15A 8SOIC... |
| FDS6680S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 11.5A 8-S... |
| FDS6688 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8SOIC... |
| FDS6890A | ON Semicondu... | -- | 7500 | MOSFET 2N-CH 20V 7.5A 8SO... |
| FDS6679 | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 13A 8SOIC... |
| FDS6670A | ON Semicondu... | -- | 22500 | MOSFET N-CH 30V 13A 8-SOI... |
| FDS6961A_F011 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 3.5A 8SO... |
| FDS6682 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 14A 8SOIC... |
| FDS6681Z | ON Semicondu... | -- | 10000 | MOSFET P-CH 30V 20A 8-SOP... |
| FDS6574A | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 16A 8-SOI... |
| FDS6673BZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 14.5A 8-S... |
| FDS6990AS | ON Semicondu... | -- | 5000 | MOSFET 2N-CH 30V 7.5A 8SO... |
| FDS6875 | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 6A 8SOIC... |
| FDS6892A | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.5A 8SO... |
| FDS6984AS | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 5.5A/8.5... |
| FDS6576 | ON Semicondu... | -- | 7500 | MOSFET P-CH 20V 11A 8SOIC... |
| FDS6680AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 11.5A 8SO... |
| FDS6982AS | ON Semicondu... | -- | 10000 | MOSFET 2N-CH 30V 6.3A/8.6... |
| FDS6690AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 10A 8SOIC... |
| FDS6994S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 6.9A/8.2... |
| FDS6298_G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CHANNEL 30V 13A ... |
| FDS6575 | ON Semicondu... | -- | 15000 | MOSFET P-CH 20V 10A 8-SOP... |
| FDS6699S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A 8SOIC... |
| FDS6298 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
| FDS6982S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 6.3A/8.6... |
| FDS6294 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 13A 8SOIC... |
| FDS6690A | ON Semicondu... | -- | 5000 | MOSFET N-CH 30V 11A 8-SOI... |
| FDS6688S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8SOIC... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
FDS6680 Datasheet/PDF