
Allicdata Part #: | FQD11P06TMTR-ND |
Manufacturer Part#: |
FQD11P06TM |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 9.4A DPAK |
More Detail: | P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.26000 |
10 +: | $ 0.25220 |
100 +: | $ 0.24700 |
1000 +: | $ 0.24180 |
10000 +: | $ 0.23400 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 4.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQD11P06TM is a type of field effect transistor (FET). FET is made from organic semiconductor material. This material consists of one or more layers of organic layers that have different electrical properties. FQD11P06TM is the product of Fairchild Semiconductor. It is a N-Channel enhancement mode MOSFET transistor. The full part number of the transistor is FQD11P06TM-NLQ.
The application field of FQD11P06TM mainly includes the electric energy industry and the electric product industry. For example, it can be used for power management of the electrical vehicle, such as electric battery management and power distribution management. In the electronic product industry, it can be used in products like laptop and mobile phone, such as voltage and current modulation and power supply control.
FQD11P06TM\'s working principle is based on the field effect. It is a unipolar transistor, which means that it is made of a layer of semiconductor material that is one type of doping material. The doping material is either either P-type or N-type when applied to the layer of semiconductor material. The layer of material is doped the same way so that it has a similar electric charge. An electric field is then applied to it and this creates an electric polarisation or dipole in the layer of material.
When the drain is made positive with respect to the source, the electric field generated from it is enough to make the electrons pulls into the conduction band. At this point, the transistor is switched on and the electrons flow from source to drain. The electric field created by the application of voltage is what makes the transistor work, and it is modulated by varying the electric field strength. By doing this, the conduction band of the transistor can be modified to control current.
The main benefit of FQD11P06TM is that it offers high power efficiency and low on-resistance, making it a good choice for applications where power efficiency is important. Additionally, its low on-resistance makes it an ideal choice when current needs to be regulated and managed to a certain level. Furthermore, it offers enhanced reliability and transient response, making it an excellent option for applications where reliability and fast speed are important. It also has low input capacitance, which makes it a good choice when switching speed is important. These benefits make it an ideal choice for applications in the electric energy and electronics industry, such as electric battery management, power distribution management, and voltage and current modulation.
FQD11P06TM is a very versatile transistor, since it is able to handle a variety of applications. It can be used for power management, current regulation, and fast switching, among others. It also offers enhanced reliability and excellent power efficiency, making it an ideal option for a wide range of applications. It is an excellent choice for applications in the electric energy and electronics industry, such as electric battery management, power distribution management, and voltage and current modulation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD13N06LTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 11A DPAKN... |
FQD11P06TM | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 9.4A DPAK... |
FQD19N10TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD10N20LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 7.6A DPA... |
FQD1N60TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 1A DPAKN... |
FQD1N60CTM | ON Semicondu... | -- | 2500 | MOSFET N-CH 600V 1A DPAKN... |
FQD12N20LTM_SN00173 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V DPAKN-Ch... |
FQD12N20LTM-F085 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD13N06TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 10A DPAKN... |
FQD13N10TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD1P50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 1.2A DPA... |
FQD17N08LTM | ON Semicondu... | 0.34 $ | 1000 | MOSFET N-CH 80V 12.9A DPA... |
FQD16N25CTM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 16A DPAK... |
FQD12P10TM-F085 | ON Semicondu... | 0.29 $ | 2500 | MOSFET P-CH 100V 9.4A DPA... |
FQD1N50TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.1A DPA... |
FQD1P50TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 1.2A DPA... |
FQD10N20TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7.6A DPA... |
FQD12P10TM | ON Semicondu... | -- | 1000 | MOSFET P-CH 100V 9.4A DPA... |
FQD18N20V2TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 15A DPAK... |
FQD19N10TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD1N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.1A DPA... |
FQD11P06TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 9.4A DPAK... |
FQD19N10LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD13N06LTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 11A DPAKN... |
FQD18N20V2TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 15A DPAK... |
FQD1N60TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1A DPAKN... |
FQD16N25CTM | ON Semicondu... | -- | 7500 | MOSFET N-CH 250V 16A D-PA... |
FQD19N10TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 15.6A DP... |
FQD1N80TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1A DPAKN... |
FQD12N20TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD12N20LTM-F085P | ON Semicondu... | 0.5 $ | 1000 | NMOS DPAK 200V 280 MOHMN-... |
FQD10N20CTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 7.8A DPA... |
FQD14N15TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 10A DPAK... |
FQD10N20CTM | ON Semicondu... | -- | 10000 | MOSFET N-CH 200V 7.8A DPA... |
FQD13N10LTM_NBEL001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD19N10LTM | ON Semicondu... | -- | 2500 | MOSFET N-CH 100V 15.6A DP... |
FQD12N20LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD13N10TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A DPAK... |
FQD12N20TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A DPAKN... |
FQD1N80TM | ON Semicondu... | -- | 20000 | MOSFET N-CH 800V 1A DPAKN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
