| Allicdata Part #: | FQD19N10LTMTR-ND |
| Manufacturer Part#: |
FQD19N10LTM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 15.6A DPAK |
| More Detail: | N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surf... |
| DataSheet: |  FQD19N10LTM Datasheet/PDF |
| Quantity: | 2500 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 7.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15.6A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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FQD19N10LTM is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) featuring low on-state resistance, fast switching speed and high power handling capability. It is a type of field-effect transistor (FET) that utilizes a thin conducting channel to control a wide range of current flow. This type of device is typically used in applications where a large voltage potential needs to be controlled and switched rapidly. FQD19N10LTM has been designed to provide high-speed performance, reliability and excellent quality, while still providing a cost-effective alternative to other MOSFETs.FQD19N10LTM has a maximum drain-source voltage of 100V, making it suitable for use in automotive and industrial systems. It also has a maximum drain current of 30A and is capable of supporting a wide range of currents. This device is also capable of switching at very high speeds. The device also features an insulated gate electrode, which helps prevent noise and ensure reliable operation.The applications for FQD19N10LTM are varied and depend on the requirements of the system. This device can be used in power supply regulators, switching circuits, DC-to-DC converters, and other power management systems. It can also be used in automotive applications such as automotive lighting and defense systems, as well as in industrial applications such as motor drives and medical equipment.The working principle behind FQD19N10LTM is based on the use of a metallic gate layer composed of an extremely thin layer of insulator. This layer is placed between the source and the drain and acts as an electrostatic gate which controls the flow of current. The gate electrode is then connected to either a voltage source or to a control circuit.When a voltage is applied to the gate, a channel is created in the semiconductor material. This channel allows current to flow between the source and the drain. The current can then be modulated by altering the gate voltage, thus allowing for the selection of a desired switching speed and the modulation of the current flow.As with all MOSFET devices, FQD19N10LTM has several advantages over other transistors, particularly when switching large currents. These devices offer increased power efficiency, improved reliability, and faster switching speeds.In conclusion, the FQD19N10LTM MOSFET is an ideal choice for a wide range of applications where high power and fast switching speeds are required. Its features and characteristics also make it a cost-effective and reliable solution for a variety of industrial, automotive and other applications.
The specific data is subject to PDF, and the above content is for reference
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