Allicdata Part #: | GP2M004A060CG-ND |
Manufacturer Part#: |
GP2M004A060CG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 4A DPAK |
More Detail: | N-Channel 600V 4A (Tc) 86.2W (Tc) Surface Mount D-... |
DataSheet: | GP2M004A060CG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 86.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 545pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP2M004A060CG is an enhancement type, N - Channel Metal Oxide Semiconductor Field Effect Transistor, more commonly known as an MOSFET. This small signal device works similar to a traditional transistor in that it amplifies current. MOSFETs are used extensively in many industries and have become the device of choice for many applications because of their low ON resistance, low input capacitance and their low gate drive characteristics.
GP2M004A060CG are designed for use in power supplies, motor control, DC-DC conversion, and other applications in which a low voltage drive is needed. The device is capable of passing 200A continuous and 400A peak current, making it an ideal choice for applications requiring high efficient power delivery. The device also has a low ON resistance of 0.02Ohms and a high-frequency switching capability up to 5MHz.
GP2M004A060CG Working Principle
GP2M004A060CG is a unipolar device operated by a gate-to-source voltage (VGS) applied between the gate and source. When the gate voltage drops below the threshold voltage by applying a negative voltage, the device enters its low-impedance state. This process is known as gate-source depletion. In this condition, the drain-source voltage (VDS) is the main determining factor for the device current; meaning that the device current is proportional to the drain-source voltage.
When the drain-source voltage is below the device’s breakdown voltage, the device remains in the OFF state even with an applied gate voltage. The reverse breakdown voltage is the minimum voltage at which the device will remain off even with a negative gate-source voltage applied. In this case, drain-source voltage must be higher than the reverse breakdown voltage.
GP2M004A060CG Application Field
GP2M004A060CG devices have a very fast switching time, low ON resistance, low capacitance and low voltage gate drive making them ideal for a wide range of applications. The device is often used in power supplies and converters to efficiently provide power to circuits. It can also be used in motor control applications for controlling the speed of a motor or for providing power to solenoids and relays. GP2M004A060CG devices can also be used for switching applications in computers, telecommunications and other electronic equipment.
GP2M004A060CG devices are also widely used in lighting applications for providing power to LEDs as well as for controlling power to luminaires and other light sources. The device’s small size, low voltage drive, and fast switching time makes it an ideal choice for small power applications. Moreover, the device can be used in automotive and industrial applications for current sensing and over-current protection.
The specific data is subject to PDF, and the above content is for reference
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