Allicdata Part #: | GP2M020A050N-ND |
Manufacturer Part#: |
GP2M020A050N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 20A TO3PN |
More Detail: | N-Channel 500V 20A (Tc) 312W (Tc) Through Hole TO-... |
DataSheet: | GP2M020A050N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 312W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2880pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP2M020A050N Application Field and Working Principle
Introduction
The GP2M020A050N is a type of field effect transistor (FET), more specifically, a metal-oxide-semiconductor FET (MOSFET). This type of transistor is often used as an amplifier or an electronic switch, where it is able to control an output signal based on the input signal.
Construction
MOSFETs are constructed from two layers of silicon and one layer of metal, such as aluminum. This structure is known as the "gate, drain and source" configuration. The gate is the layer of aluminum which forms a conductive channel between the two silicon layers. The other two layers are the drain and the source, which act as the output and input terminals of the transistor.
Operation
The working principle of a MOSFET is based on the application of an electric field to the gate of the device. When an electric field is applied, an electric charge builds up on the gate and creates a "channel" between the drain and source. This channel allows current to flow between the two terminals, effectively turning the transistor on. The amount of current that can flow through this channel is controlled by the amount of electric field applied to the gate.
Applications
The GP2M020A050N can be used in a variety of different applications, such as low and high power audio circuits, switching circuits, motor control circuits, and frequency converters. Due to its low on-state resistance, the GP2M020A050N is capable of switching high current and voltage levels. Therefore, it is suitable for use in power management circuits and DC-DC converters. In addition, the GP2M020A050N can also be used in high-speed switching applications, such as power MOSFET switching circuits.
Advantages
MOSFETs have several advantages compared to other types of transistors, such as bipolar junction transistors (BJTs). One of the biggest advantages is the ability to control large currents with a small input signal. MOSFETs have very low on-state resistance and can handle high voltage and current levels. Additionally, they can also operate at high frequencies, meaning they can be used in high-speed switching applications. Finally, MOSFETs are easy to drive and do not require an extra circuit for their operation.
Conclusion
The GP2M020A050N is a MOSFET which has many different applications, such as low and high power audio circuits, switching circuits, motor control circuits, and frequency converters. Its low on-state resistance makes it suitable for use in high-current and high-voltage applications. Additionally, it can operate at high frequencies and does not require an extra circuit for its operation. Therefore, the GP2M020A050N is a great choice for all kinds of switching, power management, and DC-DC converter applications.
The specific data is subject to PDF, and the above content is for reference
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