| Allicdata Part #: | HUF75939P3-ND |
| Manufacturer Part#: |
HUF75939P3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 22A TO-220AB |
| More Detail: | N-Channel 200V 22A (Tc) 180W (Tc) Through Hole TO-... |
| DataSheet: |  HUF75939P3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 20V |
| Series: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The HUF75939P3 is a single-type metal-oxide-semiconductor field-effect transistor (MOSFET), designed for use in a wide range of applications. It can be used to control electrical power output in communications systems, automotive electronics, industrial control applications, and other high-power applications. This article will discuss the application fields and working principles of the HUF75939P3.The HUF75939P3 is a voltage-controlled device, meaning that the current flowing through it is controlled by a voltage difference between two of its terminals. The HUF75939P3 has a breakdown voltage rating of over 200 V, making it suitable for relatively high voltage control applications. Additionally, the HUF75939P3 also has a low gate threshold voltage, allowing for reduced power consumption and improved circuit design flexibilities.The HUF75939P3 is an attractive choice for applications that require low voltage control, high power output, and small circuit footprint. This device is commonly used in automotive electronics, such as headlight dimmer switches and automatic door locks. It is also well-suited for use in industrial control applications, where it can be used to control motor speed or switch electrical energy.The HUF75939P3 operates on the same principle as other MOSFETs: when a voltage is applied to its gate terminal, current will flow through its source and drain terminals. This current is controlled by the voltage at the gate terminal; a higher voltage will cause more current to flow. The HUF75939P3 also has an integrated body diode, which can provide protection in the case of mismatched source and drain voltages.Finally, the HUF75939P3 also features excellent switching speeds. This makes it suitable for fast-switching applications, such as high-frequency switching in RF circuits and switch-mode power supplies. Additionally, the HUF75939P3 is designed to minimize power losses when in the active region, making it an attractive choice for low-power applications.In conclusion, the HUF75939P3 is an excellent choice for a wide range of applications, from automotive electronics to industrial control and switch-mode power supplies. Its integrated body diode, low gate threshold voltage, and high breakdown voltage rating make it an attractive choice for high-power applications as well. Finally, its excellent switching speeds make it suitable for fast-switching applications.
The specific data is subject to PDF, and the above content is for reference
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