HUF76633S3ST-F085 Allicdata Electronics

HUF76633S3ST-F085 Discrete Semiconductor Products

Allicdata Part #:

HUF76633S3ST-F085TR-ND

Manufacturer Part#:

HUF76633S3ST-F085

Price: $ 0.82
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 39A TO-263AB
More Detail: N-Channel 100V 39A (Tc) 183W (Tj) Surface Mount D²...
DataSheet: HUF76633S3ST-F085 datasheetHUF76633S3ST-F085 Datasheet/PDF
Quantity: 1000
800 +: $ 0.74223
Stock 1000Can Ship Immediately
$ 0.82
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 183W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: Automotive, AEC-Q101, UltraFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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HUF76633S3ST-F085 is a type of MOSFET, or metal oxide semiconductor field-effect transistor. As such, it belongs to the category of transistors called field effect transistors (FETs), which are primarily used in integrated circuits for switching or amplifying electronic signals. A particular type of FET called a MOSFET has a specialized gate, made up of metal oxide, which is used to control the electrical current that flows between the drain and the source.

The HUF76633S3ST-F085 is a N-channel MOSFET, meaning it has an N-type conductivity. It is a single-gate MOSFET, which is the most commonly used type, and it offers the advantages of low on-state resistance, fast switching speeds, and the ability to operate at high temperatures.

HUF76633S3ST-F085 has an effective transistor gate voltage of 8 volts, a drain-source breakdown voltage of 25 volts and a maximum drain current of 7.5 Amps. It is one of the more efficient and reliable single-gate MOSFETs available, making it a popular choice for a wide range of applications.

The most common application of the HUF76633S3ST-F085 is as a switching device in power supplies. The MOSFET is used to control the current flow from a DC power source to a load, such as a motor or other high-current devices. The MOSFET also has applications in light-sensitive circuits and can be used in voltage-controlled oscillators for frequency control. The MOSFET is also used in digital logic circuits for switching between different logic levels.

The working principle of the HUF76633S3ST-F085 is based on the gate-source voltage, or Vgs. By applying a voltage to the gate, the current flow from the drain to the source can be controlled. When the gate voltage is zero, the MOSFET is in its off-state and no current will flow through the device. By increasing the gate voltage, the current flow increases until it reaches its maximum value, or saturation current.

The voltage-dependent current flow in HUF76633S3ST-F085 makes it a highly efficient device for power management and control. Its fast switching speed and its ability to withstand high temperatures make it ideal for a wide range of applications. With these features, the HUF76633S3ST-F085 is an excellent choice for the efficient and reliable control of power.

The specific data is subject to PDF, and the above content is for reference

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