HUF76633S3ST-F085 Discrete Semiconductor Products |
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Allicdata Part #: | HUF76633S3ST-F085TR-ND |
Manufacturer Part#: |
HUF76633S3ST-F085 |
Price: | $ 0.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 39A TO-263AB |
More Detail: | N-Channel 100V 39A (Tc) 183W (Tj) Surface Mount D²... |
DataSheet: | HUF76633S3ST-F085 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.74223 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 183W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | Automotive, AEC-Q101, UltraFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 39A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76633S3ST-F085 is a type of MOSFET, or metal oxide semiconductor field-effect transistor. As such, it belongs to the category of transistors called field effect transistors (FETs), which are primarily used in integrated circuits for switching or amplifying electronic signals. A particular type of FET called a MOSFET has a specialized gate, made up of metal oxide, which is used to control the electrical current that flows between the drain and the source.
The HUF76633S3ST-F085 is a N-channel MOSFET, meaning it has an N-type conductivity. It is a single-gate MOSFET, which is the most commonly used type, and it offers the advantages of low on-state resistance, fast switching speeds, and the ability to operate at high temperatures.
HUF76633S3ST-F085 has an effective transistor gate voltage of 8 volts, a drain-source breakdown voltage of 25 volts and a maximum drain current of 7.5 Amps. It is one of the more efficient and reliable single-gate MOSFETs available, making it a popular choice for a wide range of applications.
The most common application of the HUF76633S3ST-F085 is as a switching device in power supplies. The MOSFET is used to control the current flow from a DC power source to a load, such as a motor or other high-current devices. The MOSFET also has applications in light-sensitive circuits and can be used in voltage-controlled oscillators for frequency control. The MOSFET is also used in digital logic circuits for switching between different logic levels.
The working principle of the HUF76633S3ST-F085 is based on the gate-source voltage, or Vgs. By applying a voltage to the gate, the current flow from the drain to the source can be controlled. When the gate voltage is zero, the MOSFET is in its off-state and no current will flow through the device. By increasing the gate voltage, the current flow increases until it reaches its maximum value, or saturation current.
The voltage-dependent current flow in HUF76633S3ST-F085 makes it a highly efficient device for power management and control. Its fast switching speed and its ability to withstand high temperatures make it ideal for a wide range of applications. With these features, the HUF76633S3ST-F085 is an excellent choice for the efficient and reliable control of power.
The specific data is subject to PDF, and the above content is for reference
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