IPD50N04S410ATMA1

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The IPD50N04S410ATMA1 is a short channel N-channel enhancement mode MOSFET with a high cell density and outstanding channel control. It features a high performance, low on-resistance, crash resistant and latch-up free characteristics that make it perfect for a wide range of applications. It features a low R_DS(ON) and C_ISS, and a high dV/dt capability, which makes it suitable for high frequency switching and provides efficient and reliable operation.

This device has an avalanche rated operating voltage of 40V, an R_DS(ON) of 10mΩ and a C_ISS of 0.3pF. It has a saturation voltage of 0.75V and an operating temperature range of -55 to 150°C. The on-resonance gate charge and dynamic drain-source resistance are also excellent, making it a good choice for high efficiency and low heat generation applications.

The IPD50N04S410ATMA1 MOSFET is best used in applications such as switching power supplies, circuit protection, frequency converters, general purpose logic and high load current drive circuits. The low R_DSON and C_ISS makes it well-suited for high frequency applications such as Pulse Width Modulation (PWM) controllers, DC-DC converters, and power factor correction (PFC). It is also ideal for automotive and other rugged applications due to its excellent latch-up free characteristics and crash-resistant features.

The IPD50N04S410ATMA1 MOSFET works on the principle of MOSFET technology. It is basically made up of three layers of silicon dioxide (SiO₂) and silicon channels in between. The channels allow or restrict current flow from the source to the drain of the MOSFET. At the same time, they provide high input impedance, low output impedance, and high switching speed.

The gate terminal of the MOSFET is where a continuous voltage is applied. The negative voltage on the gate terminal attracts positive charge carriers, called holes, to the channel, whereas a positive voltage repels them. This process of attraction and repelling is what regulates current flow from the source to the drain. When the voltage on the gate terminal is low, the current flow is low, and when it is higher than the threshold voltage, the current flow is high, thus making it work as a high-side or low-side switch.

In conclusion, the IPD50N04S410ATMA1 MOSFET is a highly efficient and reliable MOSFET that is suitable for a wide range of applications. With its low R_DS(ON), C_ISS, and avalanche rated operating voltage, it is ideal for applications requiring high frequency switching and high load current drive. The device’s crash-resistant and latch-up free characteristics also make it suitable for automotive and other rugged applications.

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