IPD50N06S214ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD50N06S214ATMA1 is a type of Transistors, specifically a Field Effect Transistors (FETs), MOSFETs - Single, so named due to the effect of electric fields in influencing the flow of current through a semiconductor material or other elements. Specifically, this particular FETs contains N-Channel Dual Bit MOSFET, intended for use in logic level application.

A MOSFET is an acronym for metal-oxide-semiconductor field-effect transistor. It is composed of three electrodes: the source, the drain, and the gate. The source and the drain are composed of N-type material and the gate is composed of P-type material. This type of transistor is more efficient than the traditional bipolar junction transistors, since it does not require heat to operate and does not have a steeper current than the original transistor. Furthermore, this type of transistor uses less power.

The IPD50N06S214ATMA1 MOSFET uses N-channel MOSFET technology and is optimized with a built-in body diode. It has high current drive capability, with a maximum drain-source 2Rds(on) and steady-state drain current of 277A in a single-die configuration; and a maximum drain-source 4Rds(on) and steady-state drain current of 676A in dual-die configuration. This MOSFET also features a low thermal resistance and an ultra-low gate charge.

The working principle of IPD50N06S214ATMA1 MOSFET is simple. When a voltage is applied to the gate terminal, it modulates the width of the channel between the source and the drain. A higher gate voltage enables more carriers to escape from the source and go to the drain, thus allowing a larger current to flow through the device.

The IPD50N06S214ATMA1 MOSFET is suitable for use in a wide range of applications, such as switching power supplies, frequency converters, automotive power-train control, and industrial drive systems. Its high reliability and performance, low thermal resistance and improved gate charge ensure that it is an ideal choice for designing energy-efficient electronic systems. Its features make it suitable for variable speed motor control, buck converters and PFCs.

The IPD50N06S214ATMA1 MOSFET is a useful component for modern electronics and offers great benefits for many applications. Its reliability and performance make it a great choice for those looking for an efficient and cost-effective transistor.

The specific data is subject to PDF, and the above content is for reference