IPD600N25N3GBTMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPD600N25N3GBTMA1TR-ND |
Manufacturer Part#: |
IPD600N25N3GBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 25A TO252-3 |
More Detail: | N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG... |
DataSheet: | IPD600N25N3GBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 90µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPD600N25N3GBTMA1 is a device used in the electronics industry to provide protection and power control in circuits. It is a power device specifically designed to protect circuits from overvoltage and inrush currents at high frequency. This device is a single-port, surface-mounted, 7.3 mm wide MOSFET, which has been designed for applications that require high-speed switching capability and low capacitance. The IPD600N25N3GBTMA1 also offers excellent thermal performance, low noise and low on-state resistance.
The IPD600N25N3GBTMA1 device is most commonly used in power-circuit protection, such as power supply circuit protection and automotive circuit protection. It provides surge protection from voltage spikes and current surges, which can cause electrical overload or damage to the circuit components. The device also reduces power losses due to current leakage, making it ideal for applications where efficiency is important. Additionally, this device is used in high-frequency switching applications due to its low input capacitance and fast switching speed.
The working principle of the IPD600N25N3GBTMA1 is based on its MOSFET technology. It comes equipped with a P-channel insulated-gate bipolar transistor (IGBT), which uses majority charge carriers to conduct current. The IGBT is a three-terminal device, and its gate is used to control the flow of current through the device. The gate voltage of the IPD600N25N3GBTMA1 is responsible for determining the on-state and off-state of the device. When the gate voltage is high, the device is turned on, allowing the current to flow, and when the gate voltage is low, the device is turned off, preventing the current from flowing. The IPD600N25N3GBTMA1 also comes with an internal protection circuit, which helps protect the device from overvoltage and overcurrent conditions.
In conclusion, the IPD600N25N3GBTMA1 is an ideal device for power circuit protection and high-frequency switching applications. With its low on-state resistance, fast switching speed and excellent thermal performance, it has become a preferred choice for many electronics projects. Furthermore, its internal protection circuit helps to protect it from overvoltage and overcurrent conditions. This device is also cost-effective and easy to install, which makes it a great choice for many projects.
The specific data is subject to PDF, and the above content is for reference
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