Allicdata Part #: | IPD60R520CPATMA1-ND |
Manufacturer Part#: |
IPD60R520CPATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 6.8A TO-252 |
More Detail: | N-Channel 600V 6.8A (Tc) 66W (Tc) Surface Mount PG... |
DataSheet: | IPD60R520CPATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 66W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPD60R520CPATMA1 is a single type Field Effect Transistor (FET), specifically a Metal Oxide Semiconductor FET (MOSFET), that is available in both standard and leadless packages. This particular FET has a Drain-Source voltage (Vdss) of 60 Volts, a Continuous Drain Current I D(max) of 13.7 A, and can operate at temperatures of up to 175°C. The FET is designed for a wide range of both consumer and industrial applications, from motor control and power management to embedded systems and logic/analog signal monitoring.
Field Effect Transistors work on the principle of the electric field. When a voltage is applied to the Gate of the FET, the gate creates an electric field, which in turn influences the behavior of a conducting channel which lies between the Drain and Source. As the charge on the Gate changes, the electric field also changes; thus allowing the flow of current to be regulated. Due to this working principle, FETs are extremely power efficient and are able to provide precise control and switching of loads.
The IPD60R520CPATMA1 transistor can be used for a variety of functions such as DC motor control, power switching, and signal monitoring. For example, it can be used to replace relays and mechanical switches, as it has a much higher switching speed than these conventional components. When used for DC motor control, the IPD60R520CPATMA1 can be used to control the speed and direction of the motor by providing precise current control and fast switching times. The FET\'s high switching speed also makes it suitable for power switching applications such as automotive electronics, power supplies, and various other consumer applications. In addition, the FET\'s precise control capabilities make it suitable for signal monitoring applications, where it can be used to monitor a wide range of signals, such as voltage and current, and providing accurate readings.
Overall, the IPD60R520CPATMA1 FET is an excellent choice for a wide range of projects and applications. With its power efficiency, precise control and fast switching speed, this FET is an ideal device for consumer and industrial applications. It is also available in both standard and leadless packages, making it easy to use in both hand-held and larger systems.
The specific data is subject to PDF, and the above content is for reference
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