IRL1004L Allicdata Electronics
Allicdata Part #:

IRL1004L-ND

Manufacturer Part#:

IRL1004L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 130A TO-262
More Detail: N-Channel 40V 130A (Tc) 3.8W (Ta), 200W (Tc) Throu...
DataSheet: IRL1004L datasheetIRL1004L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRL1004L is a type of field-effect transistor (FET) designed to be used in low voltage, high current applications. In a FET, the current flow is controlled by a gate voltage, thus allowing the device to be used as a switch or amplifier. The IRL1004L is a specific type of FET known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), which is a type of field effect transistor (FET) consisting of a source and a drain and a gate electrode made of a thin layer of a metal oxide. When a voltage is applied to the gate, a "gate electric field" is created which enables carriers to flow from the source to the drain. This type of transistor is used in switching and amplifying applications due to its relatively low voltage and high current capabilities.

The IRL1004L MOSFET has a P-channel enhancement-mode and a current rating of 1.5 Amps (1.5A) at 4V VDS. It features low RDS(on) resistance and is designed to switch high frequencies, making it suitable for low voltage, high current applications such as switching DC motors, controlling LED brightness, and digital switching applications. The device also features P-Channel enhancement-mode operation which makes it ideal for interfacing with other logic devices or MCUs. The IRL1004L is used in many types of digital circuits, such as power conversion circuits, power ON/OFF circuits, backlighting applications, and many more.

The working principle of the IRL1004L is based on the concept of the MOSFET. When a voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the source to the drain. This movement of electrons creates a conductive path through the device, allowing current to flow from the source to the drain. The power delivered by the device is given by VDS×IDS, where VDS is the source to drain voltage and IDS is the drain current.

The IRL1004L MOSFET is a low voltage, high current device that provides switching and amplifying functions in digital circuits. It features low RDS(on) resistance, P-channel enhancement-mode operation and a current rating of 1.5A at 4V. The working principle of the device is based on the concept of the MOSFET, where gate voltage is used to control the flow of electrons through the device. The IRL1004L is an ideal choice for applications such as motor control, LED brightness control and digital switching.

The specific data is subject to PDF, and the above content is for reference

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