IRL1404ZL Allicdata Electronics
Allicdata Part #:

IRL1404ZL-ND

Manufacturer Part#:

IRL1404ZL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 75A TO-262
More Detail: N-Channel 40V 75A (Tc) 230W (Tc) Through Hole TO-2...
DataSheet: IRL1404ZL datasheetIRL1404ZL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL1404ZL is an advanced field-effect transistor (FET) that is specially designed for applications that require high performance with low power consumption and minimal heat dissipation. It is a single channel MOSFET that is ideal for use in a variety of applications, including voltage regulation, power switching, signal amplification, and energy conversion.

The IRL1404ZL has a maximum drain current rating of 24A and a maximum drain-to-source voltage rating of 30V. It is designed to have low on-state resistance (RDS (on)) as well as low capacitance between gates and drains. It is also designed to be very efficient in heat dissipation, which makes it suitable for use in a variety of high power applications.

The working principle of the IRL1404ZL is based on the basic principle of field-effect transistors. It is composed of two parts, the gate and the source. The gate consists of a thin layer of heavily doped semiconducting material such as silicon. The source is connected to the gate and is at a slightly higher voltage than the gate. When a voltage is applied to the gate, it creates an electrostatic field which affects the conductivity of the underlying semiconductor material. This in turn affects the conductivity of the source, allowing a current to flow between the source and the gate.

In order to drive the current through the IRL1404ZL, a voltage is applied to the gate. The voltage must be greater than the source voltage in order for the FET to be turned on. When the voltage is applied, electrons in the semiconducting material are attracted to the gate, causing the conductivity of the device to increase. As the conductivity increases, current flows from the source to the gate and from the gate to the drain.

In addition to being used in voltage regulation and power switching, the IRL1404ZL can also be used in signal amplification and energy conversion applications. It is capable of providing high performance in low power applications and is highly efficient in its heat dissipation capabilities. Its low on-state resistance makes it suitable for use in high load switching applications. Its high input impedance makes it ideal for signal amplification applications.

The IRL1404ZL is a versatile FET that is suitable for use in a variety of applications. Its high performance and low power consumption make it an ideal choice for a variety of applications. Its low capacitance between gates and drains also allows for efficient signal amplification and energy conversion. Its efficient heat dissipation allows it to be used in high power applications without compromising its performance.

The specific data is subject to PDF, and the above content is for reference

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