IRL1404ZS

Vgs(th) (Max) @ Id:	2.7V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	230W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5080pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRL1404ZS Application Field and Working Principle

IRL1404ZS is an N-channel enhancement-mode 11-V (D-S) metal–oxide–semiconductor field-effect transistor (MOSFET). It exhibits a low on-resistance of 133 mΩ and a low drain-source on-state resistance at 11-V gate drive. With its fast switching speeds, low gate charge, and low on-resistance, the IRL1404ZS is ideal for a variety of power switching applications. This article will discuss the application field and working principles of the IRL1404ZS.

Application field

The IRL1404ZS is widely used in many different fields. In the field of automobiles, it is used in cars, trucks and other vehicles control systems, such as ignition control, engine control, suspension control, brake systems, and lighting systems. In the field of electrical engineering, it is used to regulate the flow of electricity, providing power to motors and other devices. It is also used in audio systems, including amplifiers, receivers, and speakers.In the computer and telecommunication field, the IRL1404ZS is an important component in the design of communication circuits, enabling the efficient control of signals transmission. It is also used in many different types of digital logic circuits, such as logic gates and circuits performing analog-to-digital (A/D) and digital-to-analog (D/A) conversion. In addition, the IRL1404ZS is well-suited for power-supply designs, used in power buttons, reset ICs and switching circuits.

Working Principle

The IRL1404ZS is an N-channel MOSFET transistor, which consists of four layers of material that form the transistor structure. The Gate terminal is where the control signal is applied, which in turn controls the flow of electricity through the transistor. The Drain and Source terminals provide the paths for current to flow into and out of the transistor, respectively.When a positive voltage is applied to the Gate terminal, it changes the characteristics of the transistor and turns it on. This affects the transistor’s Drain-Source resistance, which is also referred to as its on-resistance. When the Gate voltage is increased further, the on-resistance decreases, further increasing the Drain-Source current. When the Gate voltage is decreased, the transistor is turned off.The Gate to Source Voltage (VGS) determines the transistor’s behavior. It is also known as the “gate threshold voltage” and it is the voltage at which the transistor begins to turn on.The Drain-Source voltage (VDS) determines the transistor’s current-carrying ability. The maximum VGS is 11V and the Drain-Source on-state resistance at the 11 V gate drive is 133 mΩ. The IRL1404ZS is also well-suited for high speed switching applications, namely due to it’s low gate charge (QG) and fast switching speeds. QG is the total amount of charge that needs to be sent to the Gate in order to turn the transistor on. A lower QG results in a faster switching speed. The IRL1404ZS has a low QG of 16 nC, enabling fast switching of power. In conclusion, the IRL1404ZS can be used in a variety of applications due to its low on-resistance and low gate charge, which enables fast switching. It is used in automobiles, electrical engineering, computer and telecommunication circuits, and power-supply designs. The IRL1404ZS works by controlling the flow of electricity through the transistor and its behavior is determined by the Gate to Source voltage, the Drain-Source voltage, and the gate charge.

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