IRL1004STRLPBF Discrete Semiconductor Products

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The IRF1004STRPBF is a vertical P Channel power Mosfet developed by International Rectifier, a semiconductor company located in El Segundo, California. It belongs to the IRF family of Mosfets, which are designed for use in low-voltage and high-power applications. The IRF1004STRPBF is a single-gate MOSFET device, which is a type of Field-effect transistor (FET) used to control the passage of electronic current. It aids in power savings and increases power efficiency.

The IRF1004STRPBF works by modulating the gate voltage to control current flow. A gate voltage applied to the gate terminal of the device allows the source-drain channel to open, allowing the electrical current to flow. The gate-source voltage (VGS) along with the drain-source voltage (VDS) must be provided to the device in order for it to operate effectively. When the VGS voltage is raised above the threshold voltage of the MOSFET, the device is in an ‘ON’ state and is able to conduct current from source to drain. Conversely, if the VGS voltage is decreased below the threshold voltage, the MOSFET is configured in an ‘OFF’ state and current is blocked.

The device allows efficient switching of both AC and DC currents, making it suitable for a variety of applications. The IRF1004STRPBF offers high current and low on-resistance ratings. It can be used with wide operating temperatures, and is an ideal choice for automotive, consumer and industrial applications, such as in multimedia entertainment systems, LED display screens and LED lighting products.

Its wide operating temperature range and heat dissipation properties make the IRF1004STRPBF suitable for use in high-voltage and high-current circuits, including power inverter circuits, motor control and power supply circuits. It is also commonly used in high-power switching applications, such as solar power systems, industrial power supplies and automotive power converters. This device is especially suitable for use in circuits driven by fast and dynamic gate pulses, such as high-frequency applications, as it allows higher current densities than traditional MOSFETs.

The IRF1004STRPBF is designed with a built-in fast body diode and has a junction temperature measurement function. Its hermetically sealed package makes it suitable for operation in harsh automotive and industrial environments. In addition, international Rectifier’s FET series allows for marginal gate control, providing improved performance in circuits with high power and current density.

Overall, the IRF1004STRPBF is a highly efficient and reliable vertical P-channel Mosfet with a wide range of applications in the consumer, industrial and automotive sectors. It has a series of useful features, such as its low gate charge and low on-resistance ratings. Its built-in fast body diode and hermetically sealed package also make it very suitable for operation in harsh conditions. All of these features make it an ideal choice for applications such as power inverter circuits, motor control and power supply circuits, high-frequency switching and LED lighting products.

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