IRL1404ZSPBF

Series:	HEXFET®
Packaging:	Tube
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 5V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	5080pF @ 25V
FET Feature:	--
Power Dissipation (Max):	230W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Introduction to the IRL1404ZSPBF

The IRL1404ZSPBF is a single-gated P-Channel Field Effect Transistor (FET) designed for use in a wide range of applications, including power management, data transmission, and more. This FET is capable of providing high-frequency performance and low on-resistance while offering superior power dissipation and long-term reliability.

Application Fields

The IRL1404ZSPBF is suitable for use in a variety of applications. It is particularly useful in power management and data transmission because of its low on-resistance and high switching speed. In addition, the device can be used for motor control, IGBT gate drives, lamp control and switching, and power MOSFET protection. It is also well suited for automotive applications, such as solenoid operation, HVAC systems, and vehicle lighting.

Working Principle of IRL1404ZSPBF

The IRL1404ZSPBF is a P-Channel FET, meaning that it uses a gate voltage to control the flow of electrons through the channel (also known as current conduction). When the gate voltage is increased, the current flowed increases. The FET’s on-resistance is also reduced as the gate voltage increases, resulting in improved power efficiency and reduced power dissipation.The device’s high-frequency performance is a result of its gate-source capacitance, which is only 2.5pF. This helps to ensure that the device responds quickly to signal changes and is less susceptible to noise. Additionally, the FET is designed with a wide body that allows for improved heat dissipation, thereby reducing power loss and increasing the device’s long-term reliability.

Conclusion

The IRL1404ZSPBF is a single-gated P-Channel FET designed for use in a variety of power management and data transmission applications. It offers high-frequency performance and low on-resistance, while its wide body helps to provide superior power dissipation and long-term reliability. This makes the device ideal for motor control, IGBT gate drives, lamp control and switching, and power MOSFET protection, as well as a variety of automotive applications.

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