IRL1104S Allicdata Electronics
Allicdata Part #:

IRL1104S-ND

Manufacturer Part#:

IRL1104S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 104A D2PAK
More Detail: N-Channel 40V 104A (Tc) 2.4W (Ta), 167W (Tc) Surfa...
DataSheet: IRL1104S datasheetIRL1104S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL1104S is a single, depletion-mode, (n-channel) field effect transistor, manufactured by International Rectifier. This device is not an ideal FET since it operates very differently from what dominates the industry. To better understand the IRL1104S and its application, it is important to first understand its working principle.

At the heart of the IRL1104S is a n-type silicon layer. The source, drain and gate terminals are all connected to the n-type silicon layer. When a gate terminal voltage is applied, this voltage creates an electric field, which brings about the physical phenomenon known as electron flow. The positive voltage applied to the gate terminal causes electrons to flow across the n-type silicon layer, thereby creating a conductive channel between the source and the drain, allowing current to flow.

The IRL1104S can be used in a variety of applications. One of the most common applications is in high-power applications, where the transistor can be used as a switch, driving large loads. This may include applications such as motor control, HVAC systems, lighting controls, computer power supplies, and even industrial and agricultural equipment. In addition, the IRL1104S has been used to drive laser diodes, as well as for power product design and prototypes.

The IRL1104S operates at very high voltages and some of its features have made it very popular in the power semiconductor arena. It has the capability to switch high-currents and large voltages, making it useful in many power-related applications. It also has an extremely low input capacitance, reducing the part count, and providing a fast response time. Additionally, its low gate-drain capacitance also reduces the power dissipation. In addition, the IRL1104S features a low on-state resistance, which lowers the conduction losses, making the device more efficient.

The IRL1104S is known to be one of the most reliable field effect transistors on the market. Its enhanced production flow has made it one of the most cost effective transistors for power applications. Additionally, its high voltage capability and its low power dissipation makes it suitable for a variety of applications, such as motor control, HVAC systems, computer power supplies, and industrial and agricultural equipment.

Understanding the working principle of the IRL1104S and the various applications it is used for makes it one of the most popular transistors available to the power industry. This single, depletion-mode, n-channel field effect transistor is a great choice for high-power applications, as it can switch large currents and voltages, while also maintaining a low input capacitance, low gate-drain capacitance, and low on-state resistance.

The specific data is subject to PDF, and the above content is for reference

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