IRL1104L

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3445pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 62A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	104A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<h2>Introduction</h2><p>The IRL1104L is a single gate insulated-gate bipolar transistor ( N-Channel MOSFET) designed for use as a gate switch in a variety of applications. The IRL1104L is made using advanced silicon wafer designs, which enable a lower gate voltage than many other FETs on the market. Additionally, the IRL1104L has two distinct features that separate it from the competition - it is bipolar, allowing it to control current more precisely, and it has a lower gate voltage.</p><h2>IRL1104L Application Field</h2><p>The IRL1104L is well-suited for use in various electronic equipment applications. It is a common choice for power supplies, motor controllers, and various power amplifier circuits. It is also commonly used in applications such as switching, logic clocks, and control systems for UPS, DC/DC converters, and motor drives, as well as for transistor switching circuits.<p>The low gate voltage of the IRL1104L makes it a viable option for high-density power supplies and motor controllers where size and power dissipation are critical. The ability to dissipate large amounts of power while maintaining relatively low gate voltages is one of the factors that makes the IRL1104L so attractive to power device designers.</p><h2>IRL1104L Working Principle</h2><p>The IRL1104L is a single-gate MOSFET, which means that it has only one gate connection. The gate voltage controls the flow of electrons from source to drain, and an appropriate voltage applied to the gate will cause the device to act as a switch, turning current on and off.</p><p>This makes the IRL1104L ideal for switching applications as it is able to control the on/off current with a much smaller voltage than other FETs on the market. It’s also important to note that the low gate voltage also reduces power consumption, making it a great choice for battery powered applications.</p><p>The IRL1104L is also a bipolar device, which means that it can control current more precisely than many other FETs. This is due to the ability to control the device by manipulating the on/off currents within the circuit. Additionally, because it is a bipolar device, its response time is reduced, meaning that it can be used for switching applications with faster switching speeds.</p><p>Overall, the IRL1104L is an excellent choice for many device switching applications. It’s low gate voltage and high reliability make it a great choice for a variety of power related applications. Additionally, its ability to control current precisely make it a great choice for timing and other logic circuits.</p>

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