Allicdata Part #: | IRL1004STRRPBF-ND |
Manufacturer Part#: |
IRL1004STRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 130A D2PAK |
More Detail: | N-Channel 40V 130A (Tc) 3.8W (Ta), 200W (Tc) Surfa... |
DataSheet: | IRL1004STRRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5330pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 78A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL1004STRRPBF is a type of Field Effect Transistor (FET) that belongs to the Single MOSFET family. It is a small-signal N-channel MOSFET designed for a variety of applications.
The IRL1004STRRPBF is constructed on a 300mm gallium nitride substrate and has a drain-source breakdown voltage of 14V. It includes a built-in ESD diode that is used to protect the device from Electrostatic Discharge (ESD) damage. It has a maximum current of 18.5A and a maximum temperature range of 175°C.
The IRL1004STRRPBF is typically used in power supply and motor control applications, such as switch-mode power supplies and motor control circuits. It is also used in automotive applications, such as for electronic control circuits, electric vehicle charging systems, and as a low-level power switch in airbags and other safety devices. Additionally, it is used in consumer electronics such as TV, audio, and digital cameras.
The IRL1004STRRPBF is designed to work with a wide range of operating voltages and frequencies. It has an on-resistance of 1.00mΩ, an off-state drain-source voltage of −11V, and a gate-source voltage of −4.5V. It also features a Gate-Source Breakdown Voltage of 15V.
The IRL1004STRRPBF works as a semiconductor switch by opening and closing an electrical circuit based on the gate-source voltage difference. The device is opened and closed when the gate voltage is increased or decreased, respectively. When the device is closed, the current between the drain and the source is controlled by the gate voltage. The device can also be used to amplify a signal as it can act like a current amplifier.
The IRL1004STRRPBF is a versatile device that can be used in a variety of applications. Its robust construction and impressive performance make it an ideal choice for a wide range of applications. With its high power density and low operating temperature, it can provide an efficient and reliable source of power.
The specific data is subject to PDF, and the above content is for reference
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