IRL1104 Allicdata Electronics
Allicdata Part #:

IRL1104-ND

Manufacturer Part#:

IRL1104

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 104A TO-220AB
More Detail: N-Channel 40V 104A (Tc) 167W (Tc) Through Hole TO-...
DataSheet: IRL1104 datasheetIRL1104 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL1104 is a power MOSFET (metal–oxide–semiconductor field-effect transistor) designed for use as a load switch or level shifter. It is a single-output transistor with an extremely low on-resistance, making it ideal for applications requiring low power consumption and high efficiency. The IRL1104 is part of a family of power FETs (field-effect transistors) developed by International Rectifier that offers improved performance, reliability and cost savings.

The IRL1104 can be used in a variety of applications. It is commonly used in audio/visual applications, such as audio amplifiers, powered speakers, high-resolution TV sets, CD players, DVD players, and digital video processors. The IRL1104 can also be used in telecommunications, mobile phone base stations and power management applications. Additionally, it can be used in industrial applications such as fans, motors and power supplies.

The IRL1104 is a single-output device, meaning it has only one output terminal. This makes it suitable for applications where a single output voltage is required. The device also has an extremly low on-resistance of 0.5 ohms typical and 1.2 ohms maximum, which enables it to maintain a low power consumption and improved efficiency. The IRL1104 is designed with a P-channel MOSFET, which further reduces the power losses due to its lower threshold voltage. It also has a maximum drain voltage of 17V and a maximum gate voltage of ±12V, making it suitable for a wide range of applications.

The working principle of the IRL1104 is based on the MOSFET field-effect. When a voltage is applied to the gate entering the device, an electric field is created between the gate and the source of the device. This electric field attracts charge carriers from the source to the drain. The greater the gate voltage, the greater the number of charge carriers that are attracted to the drain. As a result, the resistance between the source and drain decreases, allowing current to flow through the device. The drain-source resistance is controlled by the gate voltage, which allows the IRL1104 to be used as a level shifter or as a load switch.The specific data is subject to PDF, and the above content is for reference

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