IRL1004LPBF

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The IRL1004LPBF is an integrated power field effect transistor (FET) designed for high voltage and high speed switching applications. It is part of the International Rectifier\'s LP family of low-voltage, low-power devices and is offered in an eight-terminal, surface mount PowerPAK packaging. The device features an advanced technology, low on-resistance and is designed to provide excellent switching characteristics and enhanced reliability.

The IRL1004LPBF is applicable in a wide range of applications, such as automotive and home appliance, as well as industrial, medical and telecom applications.

The IRL1004LPBF is a 100V N-channel MOSFET with a maximum drain current rating of 12A. It is well suited for use in high-side switching applications due to its a low gate-to-source threshold voltage. The device has an operating temperature range of -55°C to 150°C, along with an SOA (safe operating area) of 4.5A@100V. The device also has a maximum power dissipation of 600 mW (TJ = 25°C).

The IRL1004LPBF offers a maximum drain to source voltage (VDS) of 100V, and its threshold voltage is +2.0V. The device has a drain-to-source ON-resistance of 54 mOhms and a turn-on delay time of 35 ns when operated at a maximum junction temperature, depending on the gate drive. The device has a switching time of 87 ns when the maximum drain current rating is applied.

The IRL1004LPBF is designed for optimum performance in switching applications, and utilizes a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. The device consists of an insulated gate bipolar transistor (IGBT) and an integrated free-wheeling diode in a single package. The MOSFET is driven by an electric field between its drain and source terminals, which is generated by the gate voltage. The gate voltage controls the MOSFET\'s current, thus allowing for high-speed switching.

The IRL1004LPBF offers excellent switching performance with a maximum drain-to-source voltage (VDS) of 100V and a drain current rating of 12A. The device also has a low gate-to-source threshold voltage (VGS), as well as a low turn-on delay time. The device is also designed to provide enhanced reliability, as it features a dielectric isolation technology that protects the MOSFET from electrical overstress (EOS). The device is also housed in a surface mount PowerPAK package that offers superior thermal performance.

Due to its advanced technology and superior performance, the IRL1004LPBF is ideal for a variety of high-power switching applications. It is particularly well suited for high-voltage and high-speed switching applications in automotive and home appliance, as well as industrial, medical and telecom systems.

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