IRL1104STRR

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The IRL1104STRR is a useful power management component that has numerous applications in today’s electronics. As a single-N-channel MOSFET, this transistor offers excellent performance in its intended operating situations. In this article, we’ll provide background information on its operation and working principle, as well as its practical applications.

IRL1104STRR Overview

The IRL1104STRR is a logic-level N-channel Power MOSFET developed by International Rectifier Corporation. This is a 60V device that’s specifically designed to works at low drain-source voltages (breakdown voltage VDS=60V) and low gate-source voltages (threshold voltage VGS=4.5V). This transistor features a high-frequency operating range, with fast switching speeds and temperature stability. It is explicitly designed to deal with low-gate-charge switching power performance.

The IRL1104STRR is available in a surface-mounted package, which makes it useful for space-conscious applications. The package includes a double-sided wake-up feature, which allows it to handle a wide variety of power loads. This power unit operates at maximum drain-source voltages of up to 62V and has a very low threshold voltage (VGS=4.5V). On-resistance is specified up to 12.3Ω at a gate voltage of 10V. The working temperature can range from -55°C to 150°C.

IRL1104STRR Applications

The IRL1104STRR is typically used for switching applications in power sup- plies. Because of its low on-resistance and fast switching speed, this component is an ideal choice for controlling large amounts of power with minimal energy loss. It is also suitable for high-voltage/low-power applications, such as power protection circuits. The IRL1104STRR can also be used to drive high-current loads in motor control circuits.

In addition to motor control and power supply applications, the IRL1104STRR is also suitable for clocking applications, such as clock buffer stages, clock drivers, and delay element designs. It can also be used to drive capacitive loads, such as electrostatic discharge beams for EMI/EMC testing. This transistor is an excellent choice for high-side shutdown circuits, as well as for charging and discharging of control systems.

IRL1104STRR Working Principle

A single-N-channel MOSFET, such as the IRL1104STRR, works on a principle of electron movement through a channel between the drain and the source. When a voltage is applied to the gate of the transistor, the electrons are expelled from the channel and the transistor is turned on. The IRL1104STRR is a “logic-level” MOSFET, meaning that it changes its state at a much lower voltage than conventional MOSFETs. This low-voltage change makes the IRL1104STRR effective at driving large currents while still consuming less energy than other MOSFETs.

The IRL1104STRR also features a “low-gate-capacitance” design, which allows for very fast switching speeds. This makes it an excellent choice for applications requiring fast switching times, such as clocking applications. This transistor also has a low on-resistance design, which minimizes power loss. The low on-resistance of the IRL1104STRR ensures that the power it outputs is clean and efficient.

Conclusion

The IRL1104STRR is a versatile and efficient single-N-channel Power MOSFET that is suitable for a wide range of applications. With its low-gate-capacitance and low on-resistance design, this transistor is an excellent choice for switching, driving, and clocking applications. As one of the most reliable power management components on the market, the IRL1104STRR provides excellent performance in low-voltage and high-current applications.

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