IRL1004S Allicdata Electronics
Allicdata Part #:

IRL1004S-ND

Manufacturer Part#:

IRL1004S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 130A D2PAK
More Detail: N-Channel 40V 130A (Tc) 3.8W (Ta), 200W (Tc) Surfa...
DataSheet: IRL1004S datasheetIRL1004S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL1004S is a high-performance insulated gate bipolar transistor (IGBT) device intended for use in a range of industrial and home appliance applications. The device operates at a nominal collector-emitter voltage of 1200V and offers an average current rating of 15 amperes. The IRL1004S offers superior performance over conventional bipolar transistors by providing higher switching speed and lower losses. Because of its low switching losses, this device is suitable for high frequency applications such as low-voltage drives and inverters.

The IRL1004S has a single-sided connection configuration that is designed for easy application and use. The device uses a two-pin input and four-pin output. The input junction is used for voltage and current control, while the output junction is used for transferring the collector-emitter voltage of the device. The output junction is also used for supplying the gate-emitter voltage of the device.

The working principle of the IRL1004S is based on the construction of a typical field-effect transistor (FET) device. A FET device consists of a gate, an input, and an output. The gate is connected to the input voltage and current supplied to the device. The current then travels through the gate, which forms an electric field between the gate and the input. This electric field serves to control the current flow between the input and the output and allows a user to control the device\'s output current.

The IRL1004S has been designed to maximize its performance in a range of industrial and home appliance applications. Its single-sided connection makes it easy to use in a range of applications such as, motor drivers, DC-DC converters, UPS systems and, home appliance control circuits. Its high-performance switching characteristics and low switching losses make it an ideal choice for applications requiring high-frequency operation.

In conclusion, the IRL1004S is a high-performance IGBT device intended for use in a range of industrial and home appliance applications. Its single-sided connection allows for easy application, while its high-performance switching characteristics and low switching losses make it a perfect choice for applications requiring high frequency operation. Its low switching losses and reliable switching performance make the IRL1004S a favored choice for motor drivers, DC-DC converters, UPS systems and, control circuits in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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