IRL1004SPBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5330pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 78A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	130A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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• IRL1004SPBF Introduction

The IRL1004SPBF is a 62V single N-Channel HEXFET Power MOSFET produced by Infineon Technologies. It is a lower resistance power MOSFET which minimizes power consumption in applications such as motor control. The IRL1004SPBF has an avalanche current rating of 88A and an avalanche voltage rating of 80V. It is offered in a thermally enhanced PowerPAK SO-8 package, with an extended temperature range making it ideal for higher temperature, high power or high current applications.

• IRL1004SPBF Application Field

The IRL1004SPBF is suitable for applications such as DC-DC converters, battery chargers, DC motor control, dimmers, and LCD display thermal protection. It is also used for operating as low side switches, logic level converter drivers and Synchronous Buck Converter drivers. This device is commonly used in high power applications that require both low on-resistance and high endurance. Due to its high power capability, it can be used in high current applications such as switched mode power supplies, lighting controls and LED drivers.

• IRL1004SPBF Working Principle

The IRL1004SPBF is an n-channel power MOSFET that uses a process with ‘Cellular’ or ‘junctionless’ construction to provide superior reliability and low on-resistance. The device works by operation of the junction between the source and drain. When a voltage is applied to the gate of the device, a positive voltage causes electrons to move in the n-type material, creating a conduction path between source and drain. This reduces the resistance between source and drain, allowing current to flow from source to drain. The IRL1004SPBF device is ideal for low resistance power operation. As the drain and source are closely connected to the gate, the current is more easily controlled and the on-resistance is kept lower. This in turn leads to improved efficiency and lower power loss in power electronic switching applications. The IRL1004SPBF is available in thermally enhanced packages and extended temperature ranges, making it ideal for power demanding applications.

• Conclusion

The IRL1004SPBF is a single N-Channel HEXFET Power MOSFET produced by Infineon Technologies. Its low on-resistance and high endurance makes it suitable for applications such as motor control, DC-DC converters, battery chargers, dimmers, and LCD display thermal protection. The IRL1004SPBF utilizes a ‘Cellular’ or ‘junctionless’ construction to provide superior reliability and low on-resistance. It is offered in a thermally enhanced PowerPAK SO-8 package, with an extended temperature range making it ideal for higher temperature, high power or high current applications.

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