IRL1004STRR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRL1004STRR is a commonly used field-effect transistor (FET) and metal oxide semiconductor FET (MOSFET) with a single die and high-voltage/high-current characteristics. This FET is most commonly used in a wide range of demanding applications, such as in automotive, computer, and power supply circuits, where high-voltage/high-current operation is required. As compared to other FETs, the IRL1004STRR is capable of withstanding higher stress, has superior ESD performance, and its gate-source breakdown voltage is significantly higher, thus making it suitable for a variety of applications.

In order to achieve its high voltage and current ratings, the IRL1004STRR uses a process that combines various layers of metal and silicon oxide to form a silicon-on-insulator (SOI) structure. This structure is then surrounded by a robust metal gate layer. This unique manufacturing process makes the IRL1004STRR highly reliable, capable of withstanding higher voltages and currents than conventional FETs. The device is also much more temperature resistant, with an operating temperature range of up to 175°C.

Given its superior performance and reliability, the IRL1004STRR is commonly used in a wide range of applications including power supplies, digital circuits, and radio frequency circuitry. The FET is widely used in automotive applications due to its high current and voltage ratings, as well as its robust gate oxide layer. The device has also been widely used in medical equipment due to its superior temperature and ESD ratings. Additionally, the IRL1004STRR is often used in RF amplifiers and other RF circuitry due to its superior ESD rating and robust gate oxide layer.

In terms of its working principle, the IRL1004STRR is a field effect transistor (FET) wherein the current between the source and the drain is controlled by an electric field generated by the gate terminal. The device works by conducting current when a voltage is applied to the gate terminal. As voltage is increased, the electric field generated by the gate terminal will draw current away from the source and cause it to flow through the device and onto the drain, controlling the current between the source and drain. The strength of the electric field generated by the gate terminal depends on the voltage applied to the gate terminal, with higher voltages resulting in higher electric fields.

The IRL1004STRR is an excellent choice for a wide range of high voltage/high current applications due to its superior ESD performance, robust gate oxide layer, and high-voltage/high-current operation. The device is also highly reliable and temperature resistant, and thus is widely used in medical equipment and automotive applications. Additionally, the device’s working principle, whereby current is controlled by an electric field generated by the gate terminal, makes it ideal for applications requiring accurate and precise voltage and current control.

The specific data is subject to PDF, and the above content is for reference