IRL100HS121 Discrete Semiconductor Products

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The IRL100HS121 is a V\*RDS(ON) rated FET with a high-speed switching capability for load switching applications. It is a single N-channel MOSFET with a maximum drain-source voltage of 100V and a drain-source on-state resistance of 21 mohms. The part is composed of advanced planar MOS technology with a current-controlled gate and is specifically designed for high-speed applications.

In terms of its applications, the IRL100HS121 can be used for various high-speed switching applications including load switching, power supply boosters and converters, as well as for amplifier switching applications. In addition, it can also be used as a replacement for traditional bi-polar transistors, as well as for switching circuitry in portable communication devices. Due to its high switching frequencies, the part is also suitable for pulse applications, such as motor control, high-frequency switching and switching mode power supplies (SMPS).

The working principle of the IRL100HS121 is based on the concept of Source-Drain depletion. In order to turn on the FET, the gate voltage must exceed the breakover voltage. This can be seen by examining the FETs I-V characteristic graph. When the gate voltage exceeds the breakover voltage, a major shift in the gate-source voltage occurs, creating a depletion region in the gate-source junction. This depletion region acts as an insulator, preventing current from flowing. This, in turn, prevents current from flowing from the drain to the source, thus turning off the FET. Conversely, when the gate voltage is below or at the breakover voltage, the depletion region does not exist, allowing current from the drain to the source, thus turning on the FET.

In conclusion, the IRL100HS121 is a high-speed FET with a drain-source on-state resistance of 21 mohms and a V*RDS(ON) rated of 100V. It can be used for various high-speed switching applications including load switching, power supply boosters and converters, as well as for amplifier switching applications. The working principle of the part is based on the concept of Source-Drain depletion, where the gate voltage must exceed the breakover voltage in order to turn on the FET.

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