IRL1404S

The IRL1404S is a dynamic logic-level, N-channel, all-silicon, vertical DMOS power FET. This FET is a high-conductance device, which has an extremely low on-resistance when operated at low gate-to-source voltage. The IRL1404S has been developed for floor heating, lighting and speed control applications, and its main features include efficiency, impedance control and thermal insulation.

IRL1404S Application Field

The IRL1404S device is suitable for applications which require thorough thermal insulation, load control and impedance control. It is also suitable for applications which require smooth and gentle transition between high and low impedance parameters. Furthermore, because of its low on-resistance and high-conductivity, it can also be used for applications which require high efficiency.

The IRL1404S device can be used in various application areas, such as:

• Power converters, inverters and inverter bridges
• Lighting control, ceiling fan speed control and floor heating
• Motion control, current sensing, motor control and audio control
• Solar cell/energy systems

IRL1404S Working Principle

The IRL1404S is a dynamic N-channel vertical DMOS FET. It is built with high-conductivity silicon and it has a low on-resistance when operated at low gate-to-source voltage. The FET consists of a highly conductive N-type drain region, an insulated gate region and a P-type source region.

The FET is operated in either enhancement mode or depletion mode. In enhancement mode, the drain-to-source current is increased when a positive voltage is applied to the gate terminal. In depletion mode, a negative voltage applied to the gate terminal increases the drain-to-source current.

The FET turns OFF when the gate-to-source voltage reaches the threshold voltage. For the IRL1404S, the threshold voltage is typically 1.7V. When the FET is off, the drain-to-source current is zero and the drain-to-source impedance is infinity.

The FET’s impedance is controlled by the gate voltage. When the gate-to-source voltage is low, the drain-to-source impedance is low, which allows higher current to flow from the drain terminal to the source terminal. When the gate-to-source voltage is high, the drain-to-source impedance is high, which causes the current to decrease.

The gate current of the IRL1404S is significantly lower than that of other FETs. This property makes it ideal for applications which require thorough thermal insulation and low-noise operation.