Allicdata Part #: | IRL1104PBF-ND |
Manufacturer Part#: |
IRL1104PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 104A TO-220AB |
More Detail: | N-Channel 40V 104A (Tc) 167W (Tc) Through Hole TO-... |
DataSheet: | IRL1104PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3445pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 62A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL1104PBF is one of the latest FETs (Field Effect Transistors) manufactured and distributed by International Rectifier. It offers high-current, high-performance, high-stability FETs that are suitable for medium- to high-power applications. This MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a single, 3-terminal, N-channel device that is capable of providing up to 30A of drain current and is designed to operate over an extended temperature range. This device is designed to provide a low-voltage High-Current power solution for medium-power applications.
Features and Benefits
The main features and benefits of the IRL1104PBF are its low gate-drive threshold voltage, low input capacitance, fast switching speed, and high temperature operation. Low gate-drive threshold makes it easier to trigger the transistor gate and hence increases the efficiency of the applications. Low input capacitance makes it possible to keep the input drive voltage low, thereby reducing power losses and increasing system efficiency. Additionally, the fast switching speed of this transistor allows for fast and precise switching of high- current applications. The device is capable of operating in temperatures up to 175°C, which is much higher than traditional FETs, and thus it can be used in more extreme conditions.
Applications
The IRL1104PBF is mainly used for low voltage high power applications. It can be used in a variety of applications that require precise and fast switching such as DC/DC converters, DC Motor Control, lighting control, power amplifiers, switching power supplies, and many other high-current applications like welding inverters, high-voltage DC power supplies, etc.
Working Principle
The IRL1104PBF is a 3-terminal N-channel enhancement-mode MOSFET. The three terminals are Source, Drain, and Gate. The Source and Drain terminals act as input/output ports and allow current flow while the Gate terminal acts as a control input. By applying a voltage to the Gate terminal, the current flow through the channel (between the Source and Drain terminals) is modified. This is the principle of operation of the Transistor.
When the Gate voltage is below the threshold voltage, the MOSFET is said to be "off" and no current flows through the channel. When the Gate voltage is increased up to and beyond the threshold voltage, the MOSFET becomes "on" and current flows freely through the channel.
Conclusion
The IRL1104PBF is one of the latest and highest power FETs currently available. It offers advantages such as low gate-drive threshold voltage, low input capacitance, fast switching speed, and high temperature operation. These features make it suitable for a variety of medium- to high-power applications such as DC/DC converters, motor control, lighting control, and more. Additionally, the working principle of the FET explains how the current flow is modified by applying a voltage to the Gate terminal.
The specific data is subject to PDF, and the above content is for reference
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IRL1104STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 104A D2PA... |
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IRL1404ZL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 75A TO-26... |
IRL1404ZSTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 75A D2PAK... |
IRL1104SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 104A D2PA... |
IRL1104PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 104A TO-2... |
IRL1104LPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 104A TO-2... |
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IRL1004LPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 130A TO-2... |
IRL1004STRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 130A D2PA... |
IRL1004STRRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 130A D2PA... |
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