IRL1404STRLPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRL1404STRLPBFTR-ND |
Manufacturer Part#: |
IRL1404STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 160A D2PAK |
More Detail: | N-Channel 40V 160A (Tc) 3.8W (Ta), 200W (Tc) Surfa... |
DataSheet: | IRL1404STRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The semiconductor world has seen many different applications and fields; however, some of the most innovative and ground-breaking ideas have come in the form of IRL1404STRLPBF. This particular type of transistor is a MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, and is one of the most commonly used type of transistors in the market. This particular device has been designed to work specifically in the single-ended version.
The IRL1404STRLPBF operates on an integrated circuit design and was created by engineers to handle higher power levels than their previous models. The device combines the use of both traditional and advanced semiconductor technologies in order to perform extremely efficient power transistors which can be used in a variety of applications.
The transistor is designed for use as a single ended device, meaning that it operates with a single connection terminal. In other words, the signal is not split into two parts, instead the entire signal passes through the transistor itself. This feature makes it especially versatile and convenient, as it can be used in a wide variety of contexts. Additionally, due to its small size, it can be used in tighter spaces where large transistors would not fit.
The main advantage that IRL1404STRLPBF offers is its ability to handle high power levels, while keeping costs relatively low. This can be attributed to the device\'s special high voltage design and its integrated gate protection scheme. The device is also quite reliable, as it has been designed to handle temperatures up to 150°C without compromising on reliability.
Another benefit that this transistor offers is the low voltage drop it can generate. This is due to its superior current matching capabilities, allowing it to generate a low voltage drop across the device. This feature is especially desirable when dealing with high power levels, as the device is capable of efficiently handling large currents while still providing the user with a low voltage drop.
The main applications for the IRL1404STRLPBF involve the use of power transistors, specifically those used in power amplifiers, autopilot systems, and portable electronics. This transistor is especially useful for applications where significant power is needed, as it can handle large currents without significant losses. This device can also be found in monitors, TV sets, and portable instruments.
The working principle of the IRL1404STRLPBF can be attributed to its advanced design. The device consists of a static resistance element in the form of a metal oxide layer, which acts as the gate dielectric material. This oxide layer controls the flow of electrons, or current, through the device. When a voltage is applied to the gate, it creates a field between the source and drain of the transistor, causing current to flow through the device.
When voltage is applied to the source and drain of the transistor, it allows the electrons to pass through the oxide layer, while the gate controls how much current can be allowed to pass. As the voltage increases, the current passing through the transistor is increased, resulting in higher power levels. The device, however, needs to be properly configured in order to ensure that only the desired amount of current passes through it.
In conclusion, the IRL1404STRLPBF is a versatile MOSFET device due to its small size and its ability to handle large amounts of power. This particular device is beneficial for applications that require high power levels, as it can generate low voltage drops without compromising on reliability. The device is capable of being used in a variety of different contexts, making it a highly valuable asset for those working in the semiconductor field.
The specific data is subject to PDF, and the above content is for reference
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