IRL1404ZLPBF

Vgs(th) (Max) @ Id:	2.7V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	230W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5080pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The physical construction, basic principle of operation, and ideal application field of the IRL1404ZLPBF power MOSFET are discussed herein. First, the physical construction of IRL1404ZLPBF is studied. The Power MOSFET IRL1404ZLPBF is manufactured by the company International Rectifier. It is an N-Channel MOSFET that utilizes a low-voltage design to suit a variety of power management applications ranging from 0.8 V to 9 V. It is a high-efficiency and high-speed MOSFET with a relatively low on-resistance (R DS (ON)).

Physical Construction of IRL1404ZLPBF

The IRL1404ZLPBF MOSFET consists of a source electrode, a drain electrode, an insulated-gate electrode (or gate), and a dielectric layer separating the source and gate electrodes. The gate is made of polysilicon which is insulated from the source and drain by an oxide layer. The dielectric layer is a thin insulating film of silicon dioxide. On the dielectric layer is a thin film of polysilicon which serves as the gate electrode. The polysilicon gate is made of negative-charge carriers, so a positive potential applied to the gate attracts electrons to form a conducting channel between the source and drain, turning the transistor on.

Working Principle of IRL1404ZLPBF

The IRL1404ZLPBF MOSFET works on the principle of the modulation of the current flow between the source and the drain with the application of a voltage to the gate. In the off state, there is no current between the source and drain, as the electric field between the gate and the source is blocked by the oxide layer. When a voltage is applied to the gate, it causes an inversion layer to form on the surface of the oxide layer between the gate and the source. This inversion layer forms a conducting channel between the source and the drain, allowing current to flow between them. As the voltage on the gate increases, so does the conducting current between the source and the drain.

Application Field of IRL1404ZLPBF

The IRL1404ZLPBF MOSFET is suitable for a variety of low-voltage power management applications. It is well suited for load switch applications, current limiters, dc-dc converters, motor control applications, and voltage references. It can also be used in power converters, high-side load switches, level shifters, and switchmode power supplies. Its low on-resistance and low gate charge enable it to be used in applications where efficiency and switching speed are critical.

Conclusion

In conclusion, the IRL1404ZLPBF Power MOSFET is a versatile and powerful tool for a variety of low-voltage power management applications. Its low on-resistance, high switching speed, and low gate charge make it well-suited for a variety of tasks. It can be used as a load switch, motor controller, level shifter, or power converter. Additionally, it is also useful in high-side load switch applications and switchmode power supplies.

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