IXFH50N60P3 Allicdata Electronics
Allicdata Part #:

IXFH50N60P3-ND

Manufacturer Part#:

IXFH50N60P3

Price: $ 5.89
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 50A TO247
More Detail: N-Channel 600V 50A (Tc) 1040W (Tc) Through Hole TO...
DataSheet: IXFH50N60P3 datasheetIXFH50N60P3 Datasheet/PDF
Quantity: 37
1 +: $ 5.36130
30 +: $ 4.39635
120 +: $ 3.96738
510 +: $ 3.32401
1020 +: $ 2.89510
Stock 37Can Ship Immediately
$ 5.89
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH50N60P3 is a type of single field effect transistor (FET). It is specifically designed to handle high voltage and power ranges, making it extremely versatile and excellent for applications in a variety of different fields. As such, it has a great many uses, ranging from motor control and audio output in consumer electronics to power automation and industrial applications.


The IXFH50N60P3 is a N-channel MOSFET (metal-oxide semiconductor FET), which means it relies on a nonconductive oxide layer in order to control the flow of current through its conductors. MOSFETs are used for their advantages over traditional bi-polar transistors in providing better control over voltage thresholds, higher switching speeds, and better performance when handling pulses. MOSFETs can also offer superior RF performance and radiation tolerance.


The IXFH50N60P3 delivers peak drain current of 50 Amps, with a maximum drain-source voltage of 600 volts. Its gate-source voltage range is from -30V to +20V. The device is capable of generating a total power of 450 watts when operating at a voltage of 25V. In terms of size, the IXFH50N60P3 measures in at a relatively small TO-220 package. This makes it well suited for applications requiring high efficiency and small form factor components.


When it comes to the working principle behind the IXFH50N60P3, it uses its oxide layer to control the flow of current. This layer of oxide is between the gate and the source of the FET device, and it is what allows the MOSFET to be switched on and off. When the voltage applied to the gate is low, the oxide layer allows no current to flow, making it an ideal device for implementing complementary logic functions. When the voltage on the gate is raised to the threshold voltage, the oxide layer breaks down and allows a current to flow from the source to the drain.


The IXFH50N60P3 offers a variety of applications, such as in consumer electronics, audio output, motor control, power automation and industrial automation. This device can be used in power switching applications, such as high-side switches and low-side switches. It can also be used as a load switch in applications like audio amplifiers and light dimmers. In addition, its voltage and power capabilities make it useful for many motor control applications, including servo motors, stepper motors, and linear actuators. All in all, the IXFH50N60P3 is an incredibly versatile twin MOSFET package with a wide variety of usage scenarios.


In conclusion, the IXFH50N60P3 is a single Field Effect Transistor (FET) designed for high voltage and power management. It is an N-Channel MOSFET device that provides peak drain current of 50 Amps, with a maximum drain-source voltage of 600 volts and gate-source voltage from -30V to +20V. It operates via a non-conductive oxide layer that allows the device to be switched on and off. The IXFH50N60P3 has a wide range of diverse applications, from consumer electronics to motor control and power management.

The specific data is subject to PDF, and the above content is for reference

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