Allicdata Part #: | IXFH20N85X-ND |
Manufacturer Part#: |
IXFH20N85X |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 850V/20A ULTRA JUNCTION X-CLASS |
More Detail: | N-Channel 850V 20A (Tc) 540W (Tc) Through Hole TO-... |
DataSheet: | IXFH20N85X Datasheet/PDF |
Quantity: | 9 |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 850V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFH20N85X are small signal semiconductor field effect transistors. These devices are mainly used in low DC level circuits, as well as low power switching applications. This versatile device can be used to switch, amplify, or modulate signals as needed. These transistors are also suitable for use in linear circuits, such as current sources or current mirror circuits.
The IXFH20N85X is a single N-channel enhancement mode Field Effect Transistor (FET). These transistors are designed for DC voltage level switching and low power switching applications. They have both low input capacitance and low output capacitance, making them suitable for use in circuits requiring low capacitance. They also have a maximum rating of +20 volts, allowing for increased flexibility in power supply design.
The IXFH20N85X operates using the principle of field effect charge transfer. This action can be described as the flow of electrons from a semiconductor material to a target region, resulting in a reduction of the charge in the target region. This charge transfer is driven by an electric field that is applied by the gate, and enables the transistor to modify the conductive state of the target device.
The IXFH20N85X features two main components: the gate and the source. The source is where the current enters the transistor, while the gate controls the current flow. In order to activate the transistor, the gate must be activated with a positive voltage, which allows the current to flow. When the gate is deactivated, the transistor switches off, interrupting the current flow. This operation is ideal for controlling low DC levels, as well as low power switching applications.
The IXFH20N85X is designed for use in low voltage, low power circuits. It is extremely reliable and has a low power dissipation rating of 7.3W, allowing for longer device life. It can handle up to +20V and can be used in circuits where high voltage is desired. The low capacitance of only 22pF makes it ideal for use in low capacitance circuits, ensuring fast, reliable operation.
The IXFH20N85X is commonly used in circuits that require precision voltage control, such as those used in DC motors, battery chargers, and audio amplifiers. It is also used in circuits that require high power switching, such as in hot swap circuits and home appliance control. The IXFH20N85X can also be used in circuits requiring high speed switching, such as those used in power MOSFET drivers.
Overall, the IXFH20N85X is a reliable and versatile transistor, suitable for a variety of applications. Its low power dissipation, low capacitance, and high voltage ratings make it an ideal choice for a wide range of circuits. With its easy to use design and reliable operation, the IXFH20N85X is an ideal solution for any circuit requiring precision voltage control, or high power switching.
The specific data is subject to PDF, and the above content is for reference
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