IXFH40N85X Allicdata Electronics
Allicdata Part #:

IXFH40N85X-ND

Manufacturer Part#:

IXFH40N85X

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET NCH 850V 40A TO247
More Detail: N-Channel 850V 40A (Tc) 860W (Tc) Through Hole TO-...
DataSheet: IXFH40N85X datasheetIXFH40N85X Datasheet/PDF
Quantity: 25
Stock 25Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 860W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 850V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH40N85X is a type of Field Effect Transistor (FET) that is particularly effective in various applications due to its unique electrical characteristics. The IXFH40N85X is a single NMOS transisto with a breakdown voltage rating of 40 volts and a saturation current of 85mAmps. As with all FETs, it can be used to switch large amounts of electrical current on and off.

A key feature of the IXFH40N85X is its ability to remain in the “on” state. This means that the transistor can be switched on and off quickly and with very few losses of power. This makes the IXFH40N85X particularly suitable for use in power applications, such as motor control and power switching. It is often used in battery powered applications as it can provide latching capability, allowing the device to remain switched on even when the power is turned off.

In addition, the IXFH40N85X is able to act as an electronic gate, controlling the passage of electrical current through the devices connected to its input and output terminals. It works by utilizing the Faraday Effect, which is a phenomenon where a changing electric field produces a magnetic field. In FETs, the changing electric field is generated by a small voltage applied to the gate, allowing current to flow through the device when the gate voltage is high and blocking current flow when the gate voltage is low.

The IXFH40N85X is often used in applications requiring high-side switching and in those that require low side-switching, such as H-bridge motor drivers. It is also used in systems with high power loads such as servo motors and even in audio amplifiers. It is often used together with power MOSFETs in order to provide higher currents and better control.

The IXFH40N85X is a very versatile FET, capable of being used in a wide variety of applications. Its low power loss makes it an ideal choice for applications where efficiency and power savings are important. Its ability to easily switch on and off quickly makes it suitable for use in high-speed switching applications. All of these traits make the IXFH40N85X an excellent choice for many different devices.

The specific data is subject to PDF, and the above content is for reference

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