IXFH22N55

IXFH22N55 is a depletion-mode MOSFET which belongs to the family of field-effect transistors (FETs). The ULN2003 integral monolithic device is featured with low on-state resistance, high peak output current with recirculating diode and built-in protection against transient negative voltage and electrostatic discharge (ESD).

This article focuses on the IXFH22N55 application fields and working principle.

Application Fields

IXFH22N55 MOSFETs are usually applied in low-current applications, such as low-frequency signal amplifiers, pre-amps and power converters. They are also widely used in medical technology, as they are capable to control the current in an wide range, ranging from a few nanometers to several volts.

In addition, IXFH22N55 transistors are applied in high-voltage and high-speed applications, such as switching switching power supplies, motor speed control and motor drives, as they provide low on-state resistance, which leads to lower power dissipation and low voltage drop.

Working Principle

IXFH22N55 is a type of field-effect transistor consisting of three terminals. The source terminal is the most negative voltage, the drain terminal is the most positive voltage, and the gate terminal is used to control the current flow by varying the voltage.

In order to operate, either a positive or a negative voltage is applied to the gate terminal. When the positive voltage is applied, the source and drain are connected by an invisible field which is generated due to the electric field caused by the positive voltage. This will create a channel between the source and drain and the current will flow through this connection.

When the negative voltage is applied to the gate terminal, the electric field will be reversed, which will make the channel disappear, and the current will be cut off. This is the basic working principle of the IXFH22N55 transistors.

Conclusion

In conclusion, the IXFH22N55 transistors are usually used in low-current applications, such as low-frequency signal amplifiers and pre-amps, as well as in high-voltage and high-speed applications, such as switching switching power supplies, motor speed control and motor drives. Its working principle is based on the basic field-effect transistor technological principle, where a positive or negative voltage is applied to the gate terminal to control the channel between the source and drain.